Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric

Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2042-2045

  Chang, Y C ^a   Chang, W H ^a   Chang, Y H ^a   Kwo, J ^a   Lin, Y S ^a   Hsu, S H ^a   Hong, J M ^b   Tsai, C C ^b   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b HUGA Optotech Inc   (Taiwan)

Author keywords

Atomic layer deposition (ALD); Current collapse; GaN; HfO2; Metal oxide semiconductor field effect transistor (MOSFET)

Indexed keywords

CURRENT COLLAPSE; FIELD-EFFECT; HFO2; METAL OXIDE SEMICONDUCTOR; MOS-FET;

ATOMIC LAYER DEPOSITION; ATOMS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; SILICON COMPOUNDS;

GATE DIELECTRICS;

EID: 77955510311     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.02.013     Document Type: Article

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