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Volumn 109, Issue 8, 2011, Pages

Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces

(12) Alam, E Al a,b Cortes I a,b Besland, M P c Goullet, A c Lajaunie, L c Regreny, P d Cordier, Y e Brault, J e Cazarre A a,b Isoird, K a,b Sarrabayrouse, G a,b Morancho, F a,b

a LAAS CNRS (France)

b UNIVERSITÉ PAUL SABATIER (France)

c INSTITUT DES MATÉRIAUX JEAN ROUXEL (France)

d ECOLE CENTRALE DE LYON (France)

e CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; OXIDATION; OZONE; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON OXIDES; TEMPERATURE;

BENEFICIAL EFFECTS; C-V CHARACTERIZATION; CARBON CONTAMINATION; ELECTRON CYCLOTRON RESONANCE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; INTERFACE TRAP DENSITY; INTERFACIAL LAYER; LOW TEMPERATURES; SURFACE PREPARATION;

SILICA;

EID: 79955740231 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3572236 Document Type: Article

Times cited : (34)

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