Surface passivation of n-GaN by nitrided-thin-Ga 2O 3/SiO 2 and Si 3N 4 films

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2674-2680

  Bae, Choelhwyi ^a   Krug, Cristiano ^a   Lucovsky, Gerald ^a   Chakraborty, Arpan ^b   Mishra, Umesh ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTICS; FIXED CHARGE; METAL-INSULATOR-SEMICONDUCTOR (MIS) CAPACITORS; PLASMA ASSISTED DEPOSITION;

CAPACITORS; DIELECTRIC PROPERTIES; ELECTRIC CHARGE; ELECTRON TRAPS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MISFET DEVICES; PLASMA APPLICATIONS; POLARIZATION; SILICA; SILICON NITRIDE; SPUTTER DEPOSITION; THIN FILMS;

GALLIUM NITRIDE;

EID: 4944230947     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1772884     Document Type: Article

References (31)

1. S. J. Pearton, F. Ren, A. P. Zhang, and K. P. Lee, Mater. Sci. Eng., R. 30, 55 (2000).
2. R. Vetury, N. Q. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 48, 560 (2001).
3. T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 21, 1828 (2003).
4. C. Bae and G. Lucovsky, J. Vac. Sci. Technol. A (to be published).
5. C. Bae and G. Lucovsky, Surf. Sci. 532, 759 (2003).
6. H. C. Casey, G. G. Fountain, R. G. Alley, B. P. Keller, and S. P. DenBaars, Appl. Phys. Lett. 68, 1850 (1996).
7. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998).
8. K. Matocha, T. P. Chow, and R. J. Gutmann, IEEE Electron Device Lett. 23, 79 (2002).
9. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, 10024 (1997).
10. P. Chen, S. J. Chua, W. D. Wang, D. Z. Chi, Z. L. Miao, and Y. D. Zheng, J. Appl. Phys. 94, 4702 (2003).
11. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, IEEE Electron Device Lett. 21, 268 (2000).
12. T. R. Prunty, J. A. Smart, E. M. Chumbes, B. K. Ridley, L. F. Eastman, and J. R. Shealy, Proceedings of the 2000 IEEE/Cornell Conference on High Performance Devices (2000), p. 208.
13. X. Z. Dang, E. T. Yu, E. J. Piner, and B. T. McDermott, J. Appl. Phys. 90, 1357 (2001).
14. G. Lucovsky, IBM J. Res. Dev. 43, 301 (1999).
15. C. Bae and G. Lucovsky, J. Vac. Sci. Technol. A (to be published).
16. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
17. J. A. Cooper, Phys. Status Solidi A 162, 305 (1997).
18. B. Gaffey, L. J. Guido, X. W. Wang, and T. P. Ma, IEEE Trans. Electron Devices 48, 458 (2001).
19. J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 77, 250 (2000).
20. U. Karrer, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 77, 2012 (2000).
21. V. M. Bermudez, J. Appl. Phys. 80, 1190 (1996).
22. K. M. Tracy, W. J. Mecouch, R. F. Davis, and R. J. Nemanich, J. Appl. Phys. 94, 3163 (2003).
23. J. Neugebauer and C. G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995).
24. P. E. Blöchl and J. H. Stathis, Phys. Rev. Lett. 83, 372 (1999).
25. A. Yokozawa and Y. Miyamoto, Phys. Rev. B 55, 13783 (1997).
26. T. E. Cook, C. C. Fulton, W. J. Mecouch, K. M. Tracy, R. F. Davis, E. H. Hurt, G. Lucovsky, and R. J. Nemanich, J. Appl. Phys. 93, 3995 (2003).
27. T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, and R. J. Nemanich, J. Appl. Phys. 94, 3949 (2003).
28. H. Z. Massoud, J. Appl. Phys. 63, 2000 (1988).
29. T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, and R. J. Nemanich, J. Appl. Phys. 94, 7155 (2003).
30. K. M. Chang, C. C. Cheng, and C. C. Lang, Solid-State Electron. 46, 1399 (2002).
31. C. T. Lee, H. Y. Lee, and H. W. Chen, IEEE Electron Device Lett. 24, 54 (2003).