Reductions in interface defects, D it , by post-oxidation plasma-assisted nitridation of GaN-SiO 2 interfaces in MOS devices

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 475-479

  Bae, C ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Interfacial defects; Remote plasma processing; Semiconductor dielectric interfaces

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; DIELECTRIC DEVICES; GALLIUM COMPOUNDS; HETEROJUNCTIONS; MOS DEVICES; NITRIDES; OXIDATION; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS;

INTERFACIAL DEFECTS; REMOTE PLASMA PROCESSING; SEMICONDUCTOR-DIELECTRIC INTERFACES;

INTERFACES (MATERIALS);

EID: 3342945209     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.077     Document Type: Conference Paper

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