Electrical characteristics of Al2O3/ TiO2/Al2O3 nanolaminate MOS capacitor on p-GaN with post metallization annealing and (NH4)2SX treatments

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 907-909

  Lee, Ko Tao ^a   Huang, Chih Fang ^a   Gong, Jeng ^b   Liou, Bo Heng ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TUNGHAI UNIVERSITY   (Taiwan)

^c INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

Author keywords

(NH4)2SX; III V semiconductor; Post metallization annealing (PMA); Thin dielectric films

Indexed keywords

(NH4)2SX; C-V CURVE; EFFECTIVE DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERISTIC; I-V AND C-V CHARACTERISTICS; III-V SEMICONDUCTOR; LEAKAGE CURRENT DENSITYS; NANOLAMINATE; POST METALLIZATION ANNEALING (PMA); POST-METALLIZATION ANNEALING; THIN DIELECTRIC FILMS; TIO;

ALUMINUM; ANNEALING; CAPACITANCE; CAPACITORS; DIELECTRIC FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLIZING; MOS CAPACITORS; SEMICONDUCTING GALLIUM;

PNEUMATIC CONTROL EQUIPMENT;

EID: 69949152227     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2026295     Document Type: Article

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