Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods

Vacuum

Volumn 76, Issue 4, 2004, Pages 471-476

  Matolin V ^a   Fabik S ^a   Glosik J ^a   Bideux, L ^b   Ould Metidji, Y ^b   Gruzza, B ^b  

^a CHARLES UNIVERSITY   (Czech Republic)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

Afterglow; GaN; Nitrogen plasma; XPS

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION; GALLIUM NITRIDE; STOICHIOMETRY; THIN FILMS; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

AFTERGLOW; NITRIDE LAYERS; NITROGEN PLASMA; SPECIES;

FILM GROWTH;

EID: 8444234730     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.12.163     Document Type: Article

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