Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces

Surface Science

Volumn 603, Issue 2, 2009, Pages 387-399

  Grabow, L C ^a   Uhlrich, J J ^a   Kuech, T F ^a   Mavrikakis, M ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

Density functional calculations; Gallium nitride; Microkinetic model; Oxygen contamination; Surface chemical reaction; X ray photoelectron spectroscopy

Indexed keywords

ADSORBATES; CHEMICAL REACTIONS; CONTAMINATION; DENSITY FUNCTIONAL THEORY; DESORPTION; ELECTRON SPECTROSCOPY; EXPERIMENTS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HYDROGEN; NEWTONIAN FLOW; NITRIDES; NONMETALS; OXYGEN; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM; SPECTRUM ANALYSIS; SULFUR COMPOUNDS; SURFACE REACTIONS; SURFACE STRUCTURE; TEMPERATURE PROGRAMMED DESORPTION;

ADSORBATE INTERACTIONS; ADSORBED OXYGENS; ANNEALING PROCEDURES; ANNEALING TREATMENTS; DENSITY FUNCTIONAL CALCULATIONS; ELEVATED TEMPERATURES; GAN (0 0 0 1); HYDROGEN SOURCES; IN-SITU; MICROKINETIC MODEL; MICROKINETIC MODELS; OXYGEN CONTAMINATION; PROCESS PARAMETERS; SURFACE CHEMICAL REACTION; SURFACE COMPOSITIONS; SURFACE OXIDES; XPS MEASUREMENTS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 58249097450     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.11.029     Document Type: Article

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