AlGaN/GaN MOS-HEMT with HfO2 dielectric and Al2 O3 interfacial passivation layer grown by atomic layer deposition

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 838-840

  Yue, Yuanzheng ^a   Hao, Yue ^a   Zhang, Jincheng ^a   Ni, Jinyu ^a   Mao, Wei ^a   Feng, Qian ^a   Liu, Linjie ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Al2O3 and HfO2; Atomic layer deposition (ALD); Interfacial passivation layer (IPL); Metal oxide semiconductor high electron mobility transistor (MOS HEMT); Stack gate

Indexed keywords

ELECTRON MOBILITY; GALLIUM NITRIDE; METALS;

AL2O3 AND HFO2; ALGAN/GAN; ATOMIC LAYER DEPOSITION (ALD); HIGH-ELECTRON MOBILITY TRANSISTOR; INTERFACIAL PASSIVATION LAYER (IPL); METAL-OXIDE SEMICONDUCTORS; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON MOBILITY TRANSISTOR (MOS-HEMT); STACK GATE;

HAFNIUM COMPOUNDS;

EID: 48649106123     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000949     Document Type: Article

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