Process conditions for improvement of electrical properties of Al 2O3/n-GaN structures prepared by atomic layer deposition

Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 1, 2010, Pages

  Hori, Yujin ^a   Mizue, Chihoko ^a   Hashizume, Tamotsu ^a,b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ANNEALING PROCESS; ATOMIC CONFIGURATION; CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL PROPERTY; FABRICATION PROCESS; INTERFACE STATE DENSITY; MICROCRYSTALLIZATION; OHMIC ELECTRODES; PROCESS CONDITION; PROTECTION LAYERS;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; MOS CAPACITORS; SILICON NITRIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77957887760     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.080201     Document Type: Article

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