Device performance of AlGaN/GaN MOS-HEMTs using La2O3 high-k oxide gate insulator

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 435-439

  Lin, Chao Wei ^a   Yang, Chih Wei ^a   Chen, Chao Hung ^a   Lin, Che Kai ^a   Chiu, Hsien Chin ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER HIGH TEMPERATURE; ALGAN/GAN; C-V CURVE; DEVICE PERFORMANCE; GATE INSULATOR; GATE OXIDE; GATE VOLTAGE SWING; GATE-LEAKAGE CURRENT; HIGH-K OXIDES; HYSTERESIS VOLTAGE; METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR; POST DEPOSITION ANNEALING; PULSED-MODE OPERATION; THERMAL STABILITY;

BINDING ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON MOBILITY; GALLIUM NITRIDE; GATE DIELECTRICS; LEAKAGE CURRENTS; MOS DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 72849150213     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331472     Document Type: Conference Paper

References (7)

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7. 2 high-k dielectric for surface passivation and gate oxide", Semicond. Sci. TechnoI., vol. 22, pp. 522-527, 2007.