Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substrates

IEEE Electron Device Letters

Volumn 27, Issue 10, 2006, Pages 796-798

  Huang, W ^a   Khan, T ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Enhancement mode; Gallium nitride; High field effect mobility; MOSFET

Indexed keywords

CIRCULAR GATES; DC CHARACTERISTICS; ENHANCEMENT-MODE; FIELD-EFFECT MOBILITIES; GAN EPILAYERS; GAN/SAPPHIRE; HIGH FIELD-EFFECT MOBILITY; HIGH-VOLTAGE MOSFET; MOSFET; N CHANNELS; SAPPHIRE SUBSTRATES;

CORUNDUM; GALLIUM NITRIDE; MOSFET DEVICES; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 33947599249     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.883054     Document Type: Article

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