Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates

Surface Science

Volumn 604, Issue 15-16, 2010, Pages 1247-1253

  Hattori, Azusa N ^a   Kawamura, Fumio ^a   Yoshimura, Masashi ^a   Kitaoka, Yasuo ^a   Mori, Yusuke ^a   Hattori, Ken ^b   Daimon, Hiroshi ^b   Endo, Katsuyoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

GaN; HF; Low energy electron diffraction; Reflection high energy electron diffraction; Scanning tunneling microscopy; Surface structure; Wet cleaning

Indexed keywords

CHEMICAL ETCHANTS; CRYSTAL WAFERS; FLAT SURFACES; FREESTANDING GAN; GAN; HF; HYDRIDE VAPOR PHASE EPITAXY; SUBSTRATE SURFACE; WET CLEANING;

CRYSTAL GROWTH; ELECTRONS; GALLIUM NITRIDE; HIGH ENERGY PHYSICS; LOW ENERGY ELECTRON DIFFRACTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SODIUM; SUBSTRATES; SURFACE CLEANING; SURFACE MORPHOLOGY; VACUUM; WET ETCHING;

GALLIUM ALLOYS;

EID: 77954243969     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.04.004     Document Type: Article

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