Some methods to make high quality GaN film by MOCVD

2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

Volumn , Issue , 2010, Pages

  Liu, Guorui ^a   Li, Xiaoyun ^a  

^a TIANJIN POLYTECHNIC UNIVERSITY   (China)

Author keywords

Buffer layer; GaN; MOCVD; Process; Sapphire

Indexed keywords

GAN; GAN FILM; HIGH QUALITY; INTERNATIONAL COMPETITIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; PROCESS; PRODUCTION EQUIPMENTS;

BUFFER LAYERS; COMPETITION; INTERNATIONAL TRADE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SAPPHIRE;

GALLIUM NITRIDE;

EID: 79952829050     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/AOM.2010.5713529     Document Type: Conference Paper

References (8)

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