Comparison of GaN-based MOS structures with different interfacial layer treatments

2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings

Volumn , Issue , 2010, Pages 459-462

  Al Alam, E ^a   Cortes I ^a   Besland, M P ^b   Regreny, P ^c   Goullet, A ^b   Morancho, F ^a   Cazarre A ^a   Cordier, Y ^d   Isoird, K ^a   Olivie F ^a  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^c CNRS   (France)

^d CNRS CHRES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CHARACTERISTIC; GAN EPITAXIAL LAYERS; INTERFACIAL LAYER; LOW TEMPERATURES; MOS STRUCTURE; PYROELECTRIC EFFECT;

GALLIUM NITRIDE; MICROELECTRONICS; MOS CAPACITORS; PLASMA DEPOSITION; SILICON COMPOUNDS;

GALLIUM ALLOYS;

EID: 77955192416     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2010.5490444     Document Type: Conference Paper

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