Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems

IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition

Volumn , Issue , 2011, Pages

  Mueller, Steve ^a   Waechtler, Thomas ^a,b   Hofmann, Lutz ^a   Tuchscherer, André ^a   Mothes, Robert ^a   Gordan, Ovidiu ^a   Lehmann, Daniel ^a   Haidu, Francisc ^a   Ogiewa, Marcel ^c   Gerlich, Lukas ^c   Ding, Shao Feng ^d   Schulz, Stefan E ^a,b   Gessner, Thomas ^a,b   Lang, Heinrich ^a   Zahn, Dietrich R T ^a   Qu, Xin Ping ^d  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR ELECTRONIC NANO SYSTEMS ENAS   (Germany)

^c Fraunhofer Center Nanoelectronic Technologies   (Germany)

^d FUDAN UNIVERSITY   (China)

Author keywords

Atomic Layer Deposition (ALD); Copper Oxide; Electrochemical deposition (ECD); Formic Acid; Hydrogen; Reduction; Ruthenium; Spintronic; ULSI Interconnect

Indexed keywords

ATOMIC HYDROGEN; CATALYTIC AMOUNTS; CU FILMS; ELECTROCHEMICAL DEPOSITION; ELECTROCHEMICAL DEPOSITION (ECD); FERROMAGNETIC FILMS; FILLING BEHAVIOR; GMR SENSORS; INTERCONNECT SYSTEMS; LINER MATERIAL; PRECURSOR MIXTURE; SEED LAYER; SPACER LAYER; THERMAL ALD; ULSI INTERCONNECT; ULSI INTERCONNECTS; VAPOR-PHASE TREATMENT;

ATOMIC LAYER DEPOSITION; ATOMS; CHIP SCALE PACKAGES; COPPER OXIDES; CRITICAL CURRENTS; ELECTROCHEMICAL SENSORS; ELECTRODEPOSITION; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FORMIC ACID; HYDROGEN; MAGNETOELECTRONICS; ORGANOMETALLICS; OXIDE FILMS; REDUCING AGENTS; REDUCTION; RUTHENIUM; TANTALUM COMPOUNDS; WATER VAPOR;

COPPER;

EID: 82155181784     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCD.2011.6068736     Document Type: Conference Paper

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