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Volumn 4, Issue 7, 2007, Pages 2330-2333
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Band offset measurements of the pulsed-laser-deposition-grown Sc 2O3 (111)/GaN (0001) heterostructure by X-ray photoelectron spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND OFFSETS;
ENERGY-BAND ALIGNMENT;
NITRIDE SEMICONDUCTORS;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
NITRIDES;
PULSED LASER APPLICATIONS;
SEMICONDUCTOR MATERIALS;
SCANDIUM;
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EID: 49749083837
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200674702 Document Type: Conference Paper |
Times cited : (12)
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References (11)
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