GaN-based p-type metal-oxide-semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

  Chiou, Ya Lan ^a   Huang, Li Hsien ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELD; CAPACITANCE VOLTAGE MEASUREMENTS; GATE OXIDE LAYERS; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR; OXIDE CHARGE; P-TYPE; PHOTOELECTROCHEMICAL OXIDATION METHODS;

DIELECTRIC DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

MOS DEVICES;

EID: 77951058001     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/4/045020     Document Type: Article

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