X-ray diffraction of III-nitrides

Reports on Progress in Physics

Volumn 72, Issue 3, 2009, Pages

  Moram, M A ^a   Vickers, M E ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 64249101572     PISSN: 00344885     EISSN: None     Source Type: Journal    
DOI: 10.1088/0034-4885/72/3/036502     Document Type: Article

References (269)

1. Nakamura S, Mukai T and Senoh M 1994 Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes Appl. Phys. Lett. 64 1687
2. Nakamura S et al 1997 InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices Japan. J. Appl. Phys. 36 L1568
3. Hammond C 2001 The Basics of Crystallography and Diffraction 2nd edn (Oxford: Oxford University Press)
4. Cullity B D and Stock S R 2001 Elements of X-Ray Diffraction 3rd edn (Englewood Cliffs, NJ: Prentice-Hall)
5. Fewster P F 2003 X-Ray Scattering from Semiconductors 2nd edn (London: Imperial College Press)
6. Pietsch U, Hol V and Baumbach T 2004 High Resolution X-Ray Scattering From Thin Films and Multilayers 2nd edn (New York: Springer)
7. Bowen D K and Tanner B K 2006 X-Ray Metrology in Semiconductor Manufacturing (Boca Raton, FL: CRC Press)
8. Bowen D K and Tanner B K 1998 High Resolution X-Ray Diffractometry and Topography (London: Taylor and Francis)
9. Frank F C 1965 On Miller-Bravais indices and four-dimensional vectors Acta Crystallogr. 18 862
10. Birkholz M, Fewster P F and Genzel C 2006 Thin Film Analysis by X-Ray Scattering (Weinheim: Wiley-VCH)
11. Poust B, Heying B, Hayashi S, Ho R, Matney K, Sandhu R, Wojtowicz M and Goorsky M 2005 Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC J. Phys. D: Appl. Phys. 38 A93
12. Born M and Wolf E 1999 Principles of Optics 7th edn (Cambridge: Cambridge University Press)
13. Colombi P et al 2008 Reproducibility in x-ray reflectometry: results from the first world-wide round-robin experiment J. Appl. Crystallogr. 41 143
14. Fatemi M 2005 Absolute measurement of lattice parameter in single crystals and epitaxic layers on a double-crystal x-ray diffractometer Acta Crystallogr. A61 301
15. Fewster P F and Andrew N L 1998 Strain analysis by x-ray diffraction Thin Solid Films 319 1
16. Wilson A J C 2006 Determination of lattice parameters International Tables for Crystallography C (Berlin: Springer)
17. Fewster P F and Andrew N L 1995 Absolute lattice parameter measurement J. Appl. Crystallogr. 28 451
18. Deslattes R D, Kessler E G Jr, Indelicato P and Lindroth E 2006 International Tables for Crystallography C (Berlin: Springer)
19. Bond W L 1960 Precision lattice constant determination Acta Crystallogr. 13 814
20. Herres N, Kirste L, Obloh H, Köhler K, Wagner J and Koidl P 2002 X-ray determination of the composition of partially strained group III nitride layers using the extended Bond method Mater. Sci. Eng. B 91-92 425
21. Darakchieva V, Paskova T, Paskov P P, Monemar B, Ashkenov N and Schubert M 2005 Structural characteristics and lattice parameters of hydride vapour phase epitaxial GaN free-standing substrates J. Appl. Phys. 97 013517
22. Darakchieva V, Monemar B and Usui A 2007 On the lattice parameters of GaN Appl. Phys. Lett. 91 031911
23. Langford J I and Wilson A J C 1973 Geometrical and statistical aspects of the accuracy of camera powder data J. Appl. Crystallogr. 6 197
24. Mueller M H, Heaton L and Miller K T 1960 Determination of lattice parameters with the aid of a computer Acta Crystallogr. 13 828
25. Langford J I 1973 The accuracy of cell dimensions determined by Cohen's method of least squares and the systematic indexing of powder data J. Appl. Crystallogr. 6 190
26. Prince E and Boggs P T 2006 Least squares International Tables for Crystallography C (Berlin: Springer) pp 678-88
27. Tagliente M A, De Caro L, Tapfer L, Waltereit P, Brandt O and Ploog K H 2002 InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates J. Appl. Phys. 92 70
28. 1-xN/GaN MQWs studied by XRD J. Phys. D: Appl. Phys. 36 A192
29. Huang X R, Bai J, Dudley M, Wagner B, Davis R F and Zhu Y 2005 Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides Phys. Rev. Lett. 95 086101
30. Sanz-Hervs A, Aguilar M, Snchez-Rojas J L, Sacedón A, Calleja E, Mũoz E, Villar C, Abril E J and López M 1997 Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (1 1 1)B GaAs J. Appl. Phys. 82 3297
31. Leszczynski M, Teisseyre H, Suski T, Grzegory I, Bockowski M, Jun J, Porowski S, Pakula K, Baranowski J M, Foxon C T and Cheng T S 1996 Lattice parameters of gallium nitride Appl. Phys. Lett. 69 73
32. Krysko M, Sarzynski M, Domagala J, Grzegory I, Lucznik B, Kamler G, Porowski S and Leszcsynski M 2005 The influence of lattice parameter variation on microstructure of GaN single crystals J. Alloys Compounds 401 261
33. Porowski S 1998 Bulk and homoepitaxial GaN-growth and characterisation J. Cryst. Growth 189/190 153
34. Van de Walle C G 2003 Effects of impurities on the lattice parameter of GaN Phys. Rev. B 68 165209
35. Paskova T, Hommel D, Paskov P P, Darakchieva V, Monemar B, Nockowski M, Suski T, Grzegory I, Tuomisto F, Saarinen K, Ashkenov N and Schubert M 2006 Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy Appl. Phys. Lett. 88 141909
36. Prystawko P, Leszczynski M, Sliwinski A, Teisseyre H, Suski T, Bockowski M, Porowski S, Damagala J, Kirchner C, Pelzmann A, Schauler M and Kamp M 1999 Epitaxy of ternary nitrides on GaN single crystals J. Cryst. Growth 198/199 1061
37. Tanaka M, Nakahata S, Sogabe K, Nakata H and Tobioka M 1997 Morphology and x-ray diffraction peak widths of aluminum nitride single crystals prepared by the sublimation method Japan. J. Appl. Phys. 36 1062
38. Schulz H and Thiemann K H 1977 Crystal structure refinement of AlN and GaN Solid State Commun. 23 815
39. Paszkowicz W, Podsiado S and Minikayev R 2004 Rietveld-refinement study of aluminium and gallium nitrides J. Alloys Compounds 382 100
40. McMurdie H F, Morris M C, Evans E H, Paretzkin B, de Groot J H, Hubbard C R and Carmel S J 1975 Aluminium nitride Standard X-ray Diffraction Patterns (NBS Monograph 25, Sec. 12) (Washington, DC: Institute for Materials Research, National Bureau of Standards) p 5
41. Iwanaga H, Kunishige A and Takeuchi S 2000 Anisotropic thermal expansion in wurtzite-type crystals J. Mater. Sci. 35 2451
42. Singh N B, Berghmans A, Zhang H, Wait T, Clarke R C, Zingaro J and Golombeck J C 2003 Physical vapor transport growth of large AlN crystals J. Cryst. Growth 250 107
43. Paszkowicz W, Knapp M, Podsiado S, Kamler G and Peka G B 2002 Lattice parameters of aluminium nitride in the range 10-291 K Acta Phys. Pol. 101 781
44. Yamaguchi M, Yagi T, Sota T, Deguchi T, Shimada K and Nakamura S 1999 Brillouin scattering study of bulk GaN J. Appl. Phys. 85 8502
45. Harutyunyan V S, Aivazyan A P, Weber E R, Kim Y, Park Y and Subramanya S G 2001 High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures J. Phys. D: Appl. Phys. 34 A35
46. Kisielowski C, Krüger J, Ruvimov S, Suski T, Ager J W, Jones E, Liliental-Weber Z, Rubin M, Weber E R, Bremser M D and Davis R F 1996 Strain-related phenomena in GaN thin films Phys. Rev. B 54 17745
47. 3 heterostructure and determination of the intrinsic lattice constants of GaN free from the strain Japan. J. Appl. Phys. 31 L1454
48. 1-xN films Appl. Phys. Lett. 71 1504
49. Lagerstedt O and Monemar B 1979 Variation of lattice parameters in GaN with stoichiometry and doping Phys. Rev. B 19 3064
50. Reeber R R and Wang K 2000 Lattice parameters and thermal expansion of GaN J. Mater. Res. 15 40
51. Balkas C M and Davis R F 1996 Synthesis routes and characterization of high-purity, single-phase gallium nitride powders J. Am. Ceram. Soc. 79 2309
52. Deguchi T, Ichiryu D, Toshikawa K, Sekiguchi K, Sota T, Matsuo R and Azuhata T 1999 Structural and vibrational properties of GaN J. Appl. Phys. 86 1860
53. Leszczynski M, Suski T, Teisseyre H, Perlin P, Grzegory I, Bockowski M, Jun J, Polowski S and Major J 1995 Lattice constants, thermal expansion and compressibility of gallium nitride J. Phys. D: Appl. Phys. 28 A149
54. Chaaben N, Boufaden T, Fouzri A, Bergaoui M S and El Jani B 2006 High-resolution x-ray diffraction of GaN grown on Si(1 1 1) by MOVPE Appl. Surf. Sci. 253 241
55. Leszczynski M, Grzegory I, Teisseyre H, Suski T, Bockowski M, Jun J, Baranowski J M, Porowski S and Domagala J 1996 The microstructure of gallium nitride monocrystals grown at high pressure J. Cryst. Growth 169 235
56. Paszkowicz W 1999 X-ray powder diffraction data for indium nitride Powder Diffract. 14 258
57. Paszkowicz W, Adamczyk J, Krukowski S, Leszczỹski M, Porowski S, Sokolowski J A, Michalec M and Łasocha W 1999 Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium Phil. Mag. A 79 1145
58. Maleyre B, Ruffenach S, Briot O and van der Lee A 2004 Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVD Superlatt. Microstruct. 36 527
59. Dyck J S, Kash K, Hayman C C, Argoitia A, Grossner M T, Angus J C and Zhou W 1999 Synthesis of bulk polycrystalline indium nitride at subatmospheric pressures MRS Symp. Proc. 14 2411
60. McNeil L E, Grimsditch M and French R H 1993 Vibrational spectroscopy of aluminium nitride J. Am Ceram. Soc. 76 1132
61. Yonenaga I, Shima T and Sluiter M H F 2002 Nano-indentation hardness and elastic moduli of bulk single-crystal AlN Japan. J. Appl. Phys. 41 4620
62. Gerlich D, Dole S L and Slack G A 1986 Elastic properties of aluminum nitride J. Phys. Chem. Solids 47 437
63. Tsubouchi K, Sugai K and Mikoshiba N 1981 1981 Ultrasonic Symposium Proceedings ed B R McEvoy (New York: IEEE) p 375
64. Boch P, Glandus J C, Jarrige J, Lecompte J P and Mexmain J 1982 Sintering, oxidation and mechanical properties of hot pressed aluminium nitride Ceram. Int. 8 34
65. Zoroddu A, Bernardini F, Ruggerone P and Fiorentini V 2001 First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: comparison of local and gradient-corrected density-functional theory Phys. Rev. B 64 045208
66. Chisholm J A, Lewis D W and Bristowe P D 1999 Classical simulations of the properties of group-III nitrides J. Phys.: Condens. Matter 11 L235
67. Kato R and Hama J 1994 First-principles calculation of the elastic stiffness tensor of aluminium nitride under high pressure J. Phys.: Condens. Matter 6 7617
68. Wright A F 1997 Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN J. Appl. Phys. 82 2833
69. Kim K, Lambrecht W R L and Segall B 1994 Electronic structure of GaN with strain and phonon distortions Phys. Rev. B 50 1502
70. Kim K, Lambrecht W R L and Segall B 1996 Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN Phys. Rev. B 53 16310
71. Shimada K, Sota T and Suzuki K 1998 First-principles study on electronic and elastic properties of BN, AlN, and GaN J. Appl. Phys. 84 4951
72. Ruiz E, Alvarez S and Alemany P 1994 Electronic structure and properties of AlN Phys. Rev. B 49 7115
73. Reeber R R and Wang K 2001 High temperature elastic constant prediction of some group iii-nitrides MRS Internet J. Nitride Semicond. Res. 6 3
74. Polian A, Grimsditch M and Grzegory I 1996 Elastic constants of gallium nitride J. Appl. Phys. 79 3343
75. Yamaguchi M, Yagi T, Azuhata T, Sota T, Suzuki K, Chichibu S and Nakamura S 1997 Brillouin scattering study of gallium nitride: elastic stiffness constants J. Phys.: Condens. Matter 9 241
76. Schwarz R B, Khachaturyan K and Weber E R 1997 Elastic moduli of gallium nitride Appl. Phys. Lett. 70 1122
77. Tagaki Y, Ahart M, Azuhata T, Sota T, Suzuki K and Nakamura S 1996 Brillouin scattering study in the GaN epitaxial layer Physica B 219/220 547
78. Moram M A, Barber Z H and Humphreys C J 2007 Accurate experimental determination of the Poisson's ratio of GaN using high-resolution x-ray diffraction J. Appl. Phys. 102 023505
79. Perry W G, Zheleva T, Bremser M D, Davis R F, Shan W and Song J J 1996 Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC (0 0 0 1) substrates J. Electron. Mater. 26 224
80. 1-xN thin films obtained by surface acoustic-wave measurements Appl. Phys. Lett. 72 2400
81. Azuhata T, Sota T and Suzuki K 1996 Elastic constants of III-V compound semiconductors: modification of Keyes' relation J. Phys.: Condens. Matter 8 3111
82. Davydov V Y, Averkiev N S, Goncharuk I N, Nelson D K, Nikitina I P, Polkovnikov A S, Smirnov A N, Jacobson M A and Semchinova O K 1997 Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC J. Appl. Phys. 82 5097
83. Łepkowski S P, Majewski J A and Jurczak G 2005 Nonlinear elasticity in III-N compounds: Ab initio calculations Phys. Rev. B 72 245201
84. Wagner J M and Bechstedt F 2002 Properties of strained wurtzite GaN and AlN Phys. Rev. B 66 115202
85. Wang X, Che S B, Ishitani Y and Yoshikawa A 2006 Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy J. Appl. Phys. 99 073512
86. Wang K and Reeber R R 2001 Thermal expansion and elastic properties of InN Appl. Phys. Lett. 79 1602
87. Marmalyuk A A, Akchurin R K and Gorbylev V A 1998 Evaluation of elastic constants of AlN, GaN, and InN Inorg. Mater. 34 691
88. Ruh R, Zangvil A and Barlowe J 1985 Elastic properties of SiC, AlN, and their solid solutions and particulate composites Am. Ceram. Soc. Bull. 64 1368
89. Drory M D, Ager J W, Suski T, Grzegory I and Porowski S 1996 Hardness and fracture toughness of bulk single crystal gallium nitride Appl. Phys. Lett. 69 4044
90. Cimalla V, Pezoldt J and Ambacher O 2007 Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications J. Phys. D: Appl. Phys. 40 6386
91. Tansley T L and Goldys E M 1999 Basic physical properties of InN Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (Emis Datareview Series) ed J H Edgar et al (London: INSPEC) p 123
92. Khan M A, Shatalov M, Maruska H P, Wang H M and Kuokstis E 2005 III-nitride UV devices Japan. J. Appl. Phys. 44 7191
93. 1-xN epitaxial films Appl. Phys. Lett. 71 1504
94. Vickers M E, Kappers M J, Smeeton T M, Thrush E J, Barnard J S and Humphreys C J 2003 Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering J. Appl. Phys. 94 1565
95. 1-xN Phys. Status Solidi a 195 628
96. 1-xN alloys Semicond. Sci. Technol. 18 850
97. Lorenz K, Franco N, Alves E, Watson I M, Martin R W and O'Donnell K P 2006 Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state Phys. Rev. Lett. 97 085501
98. Schuster M, Gervais P O, Jobst B, Hösler W, Averbeck R, Riechert H, Iberl A and Stömmer R 1999 Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data J. Phys. D: Appl. Phys. 32 A56
99. Stepanov S, Wang W N, Yavich B S, Bougrov V, Rebane Y T and Shreter Y G 2001 Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers MRS Internet J. Nitride Semicond. Res. 6 6
100. Pereira S, Correia M R, Pereira E, O'Donnell K P, Martin R W, White M E, Alves E, Sequeira A D and Franco N 2002 Splitting of x-ray diffraction and photoluminescence peaks in InGaN/GaN layers Mater. Sci. Eng. B 93 163
101. Hornstra J and Bartel W 1978 Determination of the lattice constant of epitaxial layers of III-V compounds J. Cryst. Growth 44 513
102. Pereira S, Correia M R, Pereira E, Trager-Cowan C, Sweeney F and O'Donnell K P 2002 Structural and optical properties of InGaN/GaN layers close to the critical layer thickness Appl. Phys. Lett. 81 1207
103. Pereira S, Correia M R, Pereira E, O'Donnell K P, Alves E, Sequeira A D and Franco N 2001 Interpretation of double x-ray diffraction peaks from InGaN layers Appl. Phys. Lett. 79 1432
104. Liliental-Weber Z, Benamara M, Washburn J, Domagala J Z, Bak-Misiuk J, Piner E L, Roberts J C and Bedair S M 2001 Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies J. Electron. Mater. 30 439
105. 1-xN/GaN layers: a combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study Phys. Rev. B 64 205311
106. Walukiewicz W, Ager J W, Yu K M, Liliental-Weber Z, Wu J, Li S X, Jones R E and Denlinger J D 2006 Structure and electronic properties of InN and In-rich group III-nitride alloys J. Phys. D: Appl. Phys. 39 R83
107. O'Donnell K P, Pereira S, Martin R W, Edwards P R, Tobin M J and Mosselmans J F W 2003 Wishful physics-some common misconceptions about InGaN Phys. Status Solidi a 195 532
108. Aumer M E, LeBoeuf S F, Moody B F, Bedair S M, Nam K, Lin J Y and Jiang H X 2002 Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures Appl. Phys. Lett. 80 3099
109. Zhu D, Kappers M J, McAleese C, Graham D M, Chabrol G R, Hylton N P, Dawson P, Thrush E J and Humphreys C J 2007 Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures J. Cryst. Growth 298 504
110. Roucka R, Tolle J, Chizmeshya A V G, Crozier P A, Poweleit C D, Smith D J, Tsong I S T and Kouvetakis J 2002 Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN Phys. Rev. Lett. 88 206102
111. x quaternary semiconductors J. Appl. Phys. 97 103702
112. Masters C B and Salamon N J 1993 Geometrically nonlinear stress-deflection relations for thin film/substrate systems Int. J. Eng. Sci. 31 915
113. Freund L B, Floro J A and Chason E 1999 Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations Appl. Phys. Lett. 74 1987
114. Kaschner A, Siegle H, Hoffmann A, Thomsen C, Birkle U, Einfeldt S and Hommel D 1999 Influence of doping on the lattice dynamics of GaN MRS Internet J. Nitride Semicond. Res. 4S1 G3.57
115. Kavouras P, Komninou P, Kavouras P, Katsikini M, Papaioannou V, Antonopoulos J and Karakostas T 2000 Anisotropic microhardness and crack propagation in epitaxially grown GaN films J. Phys.: Condens. Matter 12 10241
116. 1-xN films grown by molecular beam epitaxy Appl. Phys. Lett. 71 72
117. 1-xN grown by metal organic chemical vapor deposition Appl. Phys. Lett. 75 2202
118. Kirste L, Pavlov K M, Mudie S T, Punegov V I and Herres N 2005 Analysis of the mosaic structure of an ordered (Al,Ga)N layer J. Appl. Crystallogr. 38 183
119. 1-xN alloys: spontaneous formation of natural quantum wells Phys. Rev. B 71 035314
120. Northrup J E, Romano L T and Neugebauer J 1999 Surface energetics, pit formation, and chemical ordering in InGaN alloys Appl. Phys. Lett. 74 2319
121. Warren B E 1990 X-Ray Diffraction (New York: Dover)
122. Bläsing J and Krost A 2004 X-ray multiple diffraction (Umweganregung) in wurtzite-type GaN and ZnO epitaxial layers Phys. Status Solidi a 201 R17
123. Ohring M 2002 Materials Science of Thin Films; Deposition and Structure 2nd edn (New York: Academic)
124. Dadgar A et al 2003 Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon Phys. Status Solidi c 6 1583
125. Clos R, Dadgar A and Krost A 2004 Wafer curvature in the nonlinear deformation range Phys. Status Solidi a 201 R75
126. Halliwell M A G and Chua S J 1998 Determining substrate orientation using a high-resolution diffractometer J. Cryst. Growth 192 456
127. Datta R, Kappers M J, Vickers M E, Barnard J S and Humphreys C J 2004 Growth and characterisation of GaN with a reduced dislocation density Superlatt. Microstruct. 36 393
128. Metzger T, Höpler R, Born E, Ambacher O, Stutzmann M, Stömmer R, Schuster M, Göbel H, Christiansen S, Albrecht M and Strunk H P 1998 Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis x-ray diffractometry Phil. Mag. A 77 1013
129. Moram M A, Kappers M J, Zhang Y, Barber Z H and Humphreys C J 2008 Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers Phys. Status Solidi a 205 1064
130. Heinke H, Kirchner V, Einfeldt S and Hommel D 2000 X-ray diffraction analysis of the peak structure in epitaxial GaN Appl. Phys. Lett. 77 2145
131. Vickers M E, Kappers M J, Datta R, McAleese C, Rayment F D R and Humphreys C J 2005 In-plane imperfections in GaN studied by x-ray diffraction J. Phys. D: Appl. Phys. 38 A99
132. Wu X H, Fini P, Tarsa E J, Heying B, Keller S, Mishra U K, DenBaars S P and Speck J S 1998 Dislocation generation in GaN heteroepitaxy J. Cryst. Growth 189/190 231
133. Narayanan V, Lorenz K, Kim W and Mahajan S 2001 Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapour deposition Appl. Phys. Lett. 78 1544
134. 3 from atomic force microscopy Appl. Phys. Lett. 89 011914
135. Hordon M J and Averbach B L 1961 X-ray measurements of dislocation density in deformed copper and aluminium single crystals Acta Metall. 9 237
136. Ayers J E 1994 The measurement of threading dislocation densities in semiconductor crystals by x-ray diffraction J. Cryst. Growth 135 71
137. Chierchia R, Böttcher T, Figge S, Diesselberg M, Heinke H and Hommel D 2001 Mosaicity of GaN epitaxial layers: simulation and experiment Phys. Status Solidi b 228 403
138. Lafford T A, Tanner B K and Parbrook P J 2003 Direct measurement of twist mosaic in GaN epitaxial films as a function of growth temperature J. Phys. D: Appl. Phys. 36 A245
139. Kaganer V M, Brandt O, Trampert A and Ploog K H 2005 X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films Phys. Rev. B 72 045423
140. De Keijser T H, Langford J I, Mittemeijer E J and Vogels A B P 1982 Use of the Voigt function in a single line method for the analysis of x-ray diffraction line broadening J. Appl. Cryst. 15 308
141. Heinke H, Kirchner V, Einfeldt S and Hommel D 1999 Analysis of the defect structure of epitaxial GaN Phys. Status Solidi a 176 391
142. Heyring B, Wu X H, Keller S, Li Y, Kapolnek D, Keller D P, Den Baars S P and Speck J S 1996 Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films Appl. Phys. Lett. 68 643
143. Moram M A, Vickers M E, Kappers M J and Humphreys C J 2008 The effect of wafer curvature on rocking curves of gallium nitride films J. Appl. Phys. 103 093528
144. Gibart P 2004 Metal organic vapour phase epitaxy of GaN and lateral overgrowth Rep. Prog. Phys. 67 667
145. Linthicum K, Gehrke T, Thomson D, Carlson E, Rajagopal P, Smith T, Bachelor D and Davis R 1999 Pendeoepitaxy of gallium nitride thin films Appl. Phys. Lett. 75 196
146. x interlayers J. Cryst. Growth 300 70
147. Moram M A, Zhang Y, Kappers M J, Barber Z H and Humphreys C J 2007 Dislocation reduction in gallium nitride films using scandium nitride interlayers Appl. Phys. Lett. 91 152101
148. Williams D B and Carter C B 1996 Transmission Electron Microscopy (Berlin: Springer)
149. Kobayashi K, Yamaguchi A A, Kimura S, Sunakawa H, Kimura A and Usui A 1999 X-ray rocking curve determination of twist and tilt angles in GaN films grown by an epitaxial-lateral-overgrowth technique Japan. J. Appl. Phys. 38 L611
150. Srikant V, Speck J S and Clarke D R 1997 Mosaic structure in epitaxial thin films having large lattice mismatch J. Appl. Phys. 82 4286
151. Herres N, Obloh H, Bachem K H and Helming K 1999 X-ray analysis of the texture of heteroepitaxial gallium nitride films Mater. Sci. Eng. B 59 202
152. Zheng X H, Chen H, Yan Z B, Han Y J, Yu H B, Li D S, Huang Q and Zhou J M 2003 Determination of twist angle of in-plane mosaic spread of GaN films by high resolution x-ray diffraction J. Cryst. Growth 255 63
153. Amano H, Takeuchi T, Sakai H, Yamaguchi S, Wetzel C and Akasaki I 1998 Heteroepitaxy of group III nitrides for device applications Mater. Sci. Forum 264-268 1115
154. Lafford T A, Ryan P A, Joyce D E, Goorsky M S and Tanner B K 2003 Direct measurement of twist mosaic in epitaxial GaN Phys. Status Solidi a 195 265
155. Kozłowski J, Paszkiewicz R and Tłaczała M 2001 Structure characterisation of (Al, Ga)N epitaxial layers by means of x-ray diffractometry Phys. Status Solidi b 228 415
156. Ban Y P, Yang Z J, Chen Z T, Lu Y, Yu T J, Hu X D, Xu K and Zhang G Y 2006 Reduction of the edge threading dislocation density in n-type GaN by Si delta-doping J. Cryst. Growth 286 255
157. Sun Y J, Brandt O, Liu T Y, Trampert A, Ploog K H, Bläsing J and Krost A 2002 Determination of the azimuthal orientational spread of GaN films by x-ray diffraction Appl. Phys. Lett. 81 4928
158. Lee S R, West A M, Allerman A A, Waldrip K E, Follstaedt D M, Provencio P P, Koleske D D and Abernathy C R 2005 Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN and AlN heterolayers Appl. Phys. Lett. 86 241904
159. Paduano Q S, Drehman A J, Weyburne D W, Kosłowski J, Serafinczuk J, Jasinski J and Liliental-Weber Z 2003 X-ray characterisation of high quality AlN epitaxial layers: effect of growth condition on layer structural properties Phys. Status Solidi c 0 2014
160. Ungr T and Borbély A 1996 The effect of dislocation contrast on x-ray line broadening: a new approach to line profile analysis Appl. Phys. Lett. 69 3173
161. Lyons M H and Halliwell M A G 1985 Double crystal diffractometry of III-V semiconductor device structures Inst. Phys. Conf. Ser. 76 10
162. Miles S J, Green G S, Tanner B K, Halliwell M A G and Lyons M H 1989 Assessment of thin heteroepitaxial layers using skew angle asymmetrical x-ray double crystal diffraction Mater. Res. Soc. Symp. Proc 138 539
163. Itoh N 1992 X-ray diffraction method for characterisation of thin surface layers and thin epitaxial films Appl. Phys. Lett. 62 690
164. Reiher A, Bläsing J, Dadgar A and Krost A 2004 Depth-resolving structural analysis of GaN layers by skew angle x-ray diffraction Appl. Phys. Lett. 84 3537
165. Hall W H 1949 X-ray line broadening in metals Proc. Phys. Soc. A 62 741
166. Williamson G K and Hall W H 1953 X-ray line broadening from filed aluminium and wolfram Acta Metall. 1 22
167. Klug H P and Alexander L E 1973 X-Ray Diffraction Procedures for Polycrystalline and Amorphous Materials (New York: Wiley)
168. Snyder R L, Fiala J and Bunge H J 1999 Defect and Microstructure Analysis by Diffraction (Oxford: Oxford University Press)
169. De Keijser T H, Langford J I, Mittemeijer E J and Vogels A B P 1982 Use of the Voigt function in a single line method for the analysis of x-ray diffraction line broadening J. Appl. Crystallogr. 15 308
170. Warren B E and Averbach B L 1950 The effect of cold work distortion on x-ray patterns J. Appl. Phys. 21 595
171. Warren B E and Averbach B L 1952 The separation of cold work distortion and particle size broadening in x-ray patterns J. Appl. Phys. 23 497
172. Groma I 1998 X-ray line broadening due to an inhomogeneous dislocation distribution Phys. Rev. B 57 7535
173. De Keijser T H, Mittemeijer E J and Vogels A B P 1983 The determination of crystallite size and lattice strain parameters in conjunction with the profile-refinement method for the determination of crystal structures J. Appl. Crystallogr. 16 309
174. Ide T, Shimizu M, Shen X Q, Jeganathan K, Okumura H and Nemoto T 2002 Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy J. Cryst. Growth 245 15
175. Gay P, Hirsch P B and Kelly A 1953 The estimation of dislocation densities in metals from x-ray data Acta. Metall. 1 315
176. Kurtz A D, Kulin S A and Averbach B L 1956 Effect of dislocations on the minority carrier lifetime in semiconductors Phys. Rev. 101 1285
177. Chierchia R, Böttcher T, Heinke H, Einfeldt S, Figge S and Hommel D 2003 Microstructure of heteroepitaxial GaN revealed by x-ray diffraction J. Appl. Phys. 93 8918
178. Dunn C G and Koch E F 1957 Comparison of dislocation densities of primary and secondary recrystallisation grains of Si-Fe Acta Metall. 5 548
179. Wilkens M 1970 The determination and density of dislocations in deformed single crystals from broadened x-ray diffraction profiles Phys. Status Solidi a 2 359
180. Kuel R 2007 Kinematical diffraction by distorted crystals-dislocation x-ray line broadening Z. Kristallogr. 3-4 136
181. Krivoglaz M A and Ryaboshapka K P 1963 Theory of x-ray scattering by crystals containing dislocations Phys. Met. Metallogr. 15 14
182. Groma I and Monnet G 2002 Analysis of asymmetric broadening of x-ray diffraction peak profiles caused by randomly distributed polarized dislocation dipoles and dislocation walls J. Appl. Crystallogr. 35 589
183. Ungr T, Gubicza J, Ribrik G and Borbély A 2001 Crystallite size distribution and dislocation structure determined by diffraction profile analysis: principles and practical application to cubic and hexagonal crystals J. Appl. Crystallogr. 34 298
184. Hol V, Kubna J, Abramof E, Lischka K, Pesek A and Koppensteiner E 1993 X-ray double and triple crystal diffractometry of mosaic structure in heteroepitaxial layers J. Appl. Phys. 74 1736
185. Dani S and Hol V 2006 Diffuse x-ray scattering from GaN/SiC(0 0 0 1) thin films Z. Kristallogr. Suppl. 23 141
186. Waldrip K E, Han J, Figiel J J, Zhou H, Makarona E and Nurmikko A V 2001 Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors Appl. Phys. Lett. 78 3205
187. Wang H-M, Zhang J-P, Chen C-Q, Fareed Q, Yang J-W and Asif Khan M 2002 AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire Appl. Phys. Lett. 81 604
188. Parratt L G 1954 Surface studies of solids by total reflection of x-rays Phys. Rev. 95 359
189. Grundmann M and Krost A 2000 Atomic structure based simulation of x-ray scattering from strained superlattices Phys. Status Solidi b 218 417
190. Smeeton T M, Kappers M J, Barnard J S, Vickers M E and Humphreys C J 2003 Analysis of InGaN/GaN single quantum wells by x-ray scattering and transmission electron microscopy Phys. Status Solidi b 240 297
191. Fewster P 1993 X-ray diffraction from low-dimensional structures Semicond. Sci. Technol. 8 1915
192. Krost A, Bläsing J, Lünenbürger M, Protzmann H and Heuken M 1999 Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by x-ray analysis Appl. Phys. Lett. 75 689
193. Zhu D et al 2006 A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers Phys. Status Solidi c 203 1819
194. Wang T, Raviprakash G, Ranalli F, Harrison C N, Bai J, David J P R, Parbrook P J, Ao J P and Ohno Y 2005 Effect of strain relaxation and exciton localization on performance of 350 nm AlInGaN quaternary light-emitting diodes J. Appl. Phys. 97 083104
195. Fewster P F 1988 Interface roughness and period variations in MQW structures determined by x-ray diffraction J. Appl. Crystallogr. 21 524
196. Lee H H, Jang H W, Kim D H, Noh D Y, Yi M S, Tang M and Liang K S 2003 Structural characterization of InGaN thin films and multiple quantum wells: an approach of combining various x-ray scattering methods Physica B 336 109
197. Kret S, Dłewski P, Szczepańska A, ak M, Czernecki R, Kryśko M, Leszczyński M and Maciejewski G 2007 Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction Nanotechnology 18 465707
198. 1-xN/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy Appl. Phys. Lett. 82 4558
199. McAleese C, Costa P M F J, Graham D M, Xiu H, Barnard J S, Kappers M J, Dawson P, Godfrey M J and Humphreys C J 2006 Electric fields in AlGaN/GaN quantum well structures Phys. Status Solidi c 243 1551
200. Einfeldt S, Heinke H, Kirchner V and Hommel D 2001 Strain relaxation in AlGaN/GaN superlattices grown on GaN J. Appl. Phys. 89 2160
201. Feltin E, Carlin J F, Dorsaz J, Christmann G, Butté R, Laügt M, Ilegems M and Grandjean N 2006 Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications Appl. Phys. Lett. 88 051108
202. Kidd P 2003 Investigation of the precision in x-ray diffraction analysis of VCSEL structures J. Mater. Sci. Mater. Electron. 14 541
203. van der Laak N K, Oliver R A, Kappers M J and Humphreys C J 2007 Role of gross well-width fluctuations in bright, green-emitting single InGaN/GaN quantum well structures Appl. Phys. Lett. 90 121911
204. 1-xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe Appl. Phys. Lett. 92 041904
205. Krysko M and Leszczynski M 2007 Quantification of In clustering in InGaN/GaN multi-quantum-wells by analysis of x-ray diffraction data Appl. Phys. Lett. 91 061915
206. Lakner H, Liu Q, Brockt G, Radefeld A, Meinert A and Scholz F 1998 Investigation of inhomogeneities in (Al, Ga, In)N heterostructures by STEM and cathodoluminescence Mater. Sci. Eng. B 51 44
207. Moon Y-T, Kim D-J, Song K-M, Choi C-J, Han S-H, Seong T-Y and Park S-J 2001 Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells J. Appl. Phys. 89 6514
208. Ponce F A, Srinivasan S, Bell A, Geng L, Liu R, Stevens M, Cai J, Omiya H, Marui H and Tanaka S 2003 Microstructure and electronic properties of InGaN alloys Phys. Status Solidi b 240 273
209. Pereira S, Correia M R, Pereira E, O'Donnell K P, Alves E, Barradas N P, Sequeira A D, Franco N, Watson I M and Liu C 2002 Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells Phys. Status Solidi c 0 302
210. Huang D, Reshchikov M A and Morçok H 2002 Growth, structures and optical properties of III-nitride quantum dots Int. J. High Speed Electron. Syst. 12 79
211. Chamard V, Metzger T H, Bellet-Amalric E, Daudin B, Adelmann C, Mariette H and Mula G 2001 Structure and ordering of GaN quantum dot multilayers Appl. Phys. Lett. 79 1971
212. Chamard V, Metzger T, Bellet-Amalric E, Daudin B and Mariette H 2002 Investigation of GaN quantum dot stacking in multilayers with x-ray grazing incidence techniques Mater. Sci. Eng. B 93 24
213. Coraux J, Favre-Nicolin V, Proietti M G, Daudin B and Renevier H 2007 Grazing-incidence diffraction anomalous fine structure: application to the structural investigation of group-III nitride quantum dots Phys. Rev. B 75 235312
214. Piskorska E, Hol V, Siebert M, Renevier H, Schmidt T, Falta J, Yamaguchi T and Hommel D 2007 InGaN selfassembled quantum dots investigated by x-ray diffraction-anomalous-fine structure technique AIP Conf. Proc. 893 79
215. Chamard V, Schülli T, Sztucki M, Metzger T H, Sarigiannidou E, Rouvière J-L, Tolan M, Adelmann C and Daudin B 2004 Strain distribution in nitride quantum dot multilayers Phys. Rev. B 69 125327
216. Novk J, Hol V, Stangl J, Bauer G, Wintersberger E, Kiravittaya S and Schmidt O G 2005 A method for the characterization of strain fields in buried quantum dots using x-ray standing waves J. Phys. D: Appl. Phys. 38 A137
217. Kegel I, Metzger T H, Lorke A, Peisl J, Stangl J, Bauer G, García J M and Petroff P M 2000 Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots Phys. Rev. Lett. 85 1694
218. Fewster P F 2004 Advances in the structural characterisation of semiconductor crystals by x-ray scattering methods Prog. Cryst. Growth Charact. Mater. 48-49 245
219. Stangl J, Hesse A, Roch T, Hol V, Bauer G, Schuelli T and Metzger T H 2003 Structural investigation of semiconductor nanostructures by x-ray techniques Nucl. Instrum. Methods Phys. Res. B 200 11
220. Fewster P F, Hol V and Zhi D 2003 Composition determination in quantum dots with in-plane scattering compared with STEM and EDX analysis J. Phys. D: Appl. Phys. 36 A217
221. Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H and Akasaki I 1997 Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells Japan. J. Appl. Phys. 36 L382
222. Miller D A B, Chemla D S, Damen T C, Gossard A C, Wiegmann W, Wood T H and Burrus C A 1985 Electric field dependence of optical absorption near the band gap of quantum-well structures Phys. Rev. B 32 1043
223. Schwartz U T and Kneissl M 2007 Nitride emitters go non-polar Phys. Status Solidi (RRL) 1 A44
224. Paskova T, Darakchieva V, Paskov P P, Birch J, Valcheva E, Persson P O A, Arnaudov B, Tungasmitta S and Monemar B 2005 Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers J. Cryst. Growth 281 55
225. Romanov A E, Baker T J, Nakamura S and Speck J S 2006 Strain-induced polarization in wurtzite III-nitride semipolar layers J. Appl. Phys. 100 023522
226. Waltereit P, Brandt O, Trampert A, Grahn H T, Menniger J, Ramsteiner M, Reiche M and Ploog K H 2000 Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes Nature 406 865
227. Schmidt M C, Kim K C, Sato H, Fellows N, Masui H, Nakamura S, DenBaars S and Speck J 2007 High power and high external efficiency m-plane InGaN light emitting diodes Japan. J. Appl. Phys. 46 L126
228. Paskova T 2008 Development and prospects of nitride materials and devices with nonpolar surfaces Phys. Status Solidi b 245 1011
229. Darakchieva V, Paskov P P, Paskova T, Valcheva E, Monemar B and Heuken M 2003 Lattice parameters of GaN layers grown on a-plane sapphire: effect of in-plane strain anisotropy Appl. Phys. Lett. 82 703
230. Leszczynski M, Suski T, Teisseyre H, Perlin P, Grzegory I, Jun J, Porowski S and Moustakas T D 1994 Thermal expansion of gallium nitride J. Appl. Phys. 76 4909
231. Roder C, Einfeldt S, Figge S, Paskova T, Hommel D, Paskov P P, Monemar B, Behn U, Haskell B A, Fini P T and Nakamura S 2006 Stress and wafer bending of a-plane GaN layers grown on r-plane sapphire substrates J. Appl. Phys. 100 103511
232. Ghosh S, Waltereit P, Brandt O, Grahn H T and Ploog K H 2002 Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy Phys. Rev. B 65 075202
233. Darakchieva V et al 2007 Anisotropic strain and phonon deformation potentials in GaN Phys. Rev. B 75 195217
234. Paskova T, Darakchieva V, Paskov P P, Birch J, Valcheva E, Persson P O A, Arnaudov B, Tungasmitta S and Monemar B 2005 Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers J. Cryst. Growth 281 55
235. Frank F C 1965 On Miller-Bravais indices and four-dimensional vectors Acta. Crystallogr. 18 862
236. Liu R, Bell A, Ponce F A, Chen C Q, Yang J W and Khan M A 2005 Luminescence from stacking faults in gallium nitride Appl. Phys. Lett. 86 021908
237. Zakharov D N, Liliental-Weber Z, Wagner B, Reitmeier Z J, Preble E A and Davis R F 2005 Structural TEM study of nonpolar a-plane gallium nitride grown on (1 1 0) 4H-SiC by organometallic vapor phase epitaxy Phys. Rev. B 71 235334
238. Vennéguès P, Bougrioua Z and Guehne T 2007 Microstructural characterization of semipolar gan templates and epitaxial-lateral-ovrgrown films deposited on M-plane sapphire by metalorganic vapor phase epitaxy Japan. J. Appl. Phys. 46 4089
239. Stampfl C and Van de Walle C G 1998 Energetics and electronic structure of stacking faults in AlN, GaN, and InN Phys. Rev. B 57 R15052
240. Ni X, zgür, Fu Y, Biyikli N, Xie J, Baski A A, Morkoç H and Liliental-Weber Z 2006 Defect reduction in (1 1 0) a-plane GaN by two-stage epitaxial lateral overgrowth Appl. Phys. Lett. 89 262105
241. Kim K-C, Schmidt M C, Wu F, McLaurin M B, Hirai A, Nakamura S, DenBaars S P and Speck J S 2008 Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth Appl. Phys. Lett. 93 142108
242. Imer B, Wu F, DenBaars S P and Speck J S 2006 Improved quality (1 1 0) a-plane GaN with sidewall lateral epitaxial overgrowth Appl. Phys. Lett. 88 061908
243. Hashimoto T, Wu F, Speck J S and Nakamura S 2007 A GaN bulk crystal with improved structural quality grown by the ammonothermal method Nat. Mater. 6 568
244. Tyagi A, Zhong H, Fellows N N, Iza M, Speck J S, DenBaars S P and Nakamura S 2007 High brightness violet InGaN/GaN light emitting diodes on semipolar (1 0 1 1) bulk GaN substrates Japan. J. Appl. Phys. 46 L129
245. Paskov P P, Schifano R, Monemar B, Paskova T, Figge S and Hommel D 2005 Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition J. Appl. Phys. 98 093519
246. Baker T J, Haskell B A, Wu F, Speck J S and Nakamura S 2006 Characterization of planar semipolar gallium nitride films on sapphire substrates Japan. J. Appl. Phys. 45 L154
247. Kappers M J, Hollander J L, McAleese C, Johnston C F, Broom R F, Barnard J S, Vickers M E and Humphreys C J 2007 Growth and characterisation of semi-polar InGaN/GaN MQW structures J. Cryst. Growth 300 155
248. Wang H, Chen C, Gong Z, Zhang J, Gaevski M, Su M, Yang J and Khan M A 2004 Anisotropic structural characteristics of (1 1 -2 0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (1 0 -1 2) sapphire Appl. Phys. Lett. 84 499
249. Paskova T, Kroeger R, Figge S, Hommel D, Darakchieva V, Monemar B, Preble E, Hanser A, Williams N M and Tutor M 2006 High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire Appl. Phys. Lett. 89 051914
250. McLaurin M B, Hirai A, Young E, Wu F and Speck J S 2008 Basal plane stacking-fault related anisotropy in x-ray rocking curve widths of m-plane GaN Japan. J. Appl. Phys. 47 5429
251. Vennéguès P, Chauveau J M, Korytov M, Deparis C, Zuniga-Perez J and Morhain C 2008 Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy J. Appl. Phys. 103 083525
252. Kim K-C, Schmidt M C, Sato H, Wu F, Fellows N, Saito M, Fujito K, Speck J S, Nakamura S and DenBaars S P 2007 Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs Phys. Status Solidi (RRL) 1 125
253. Orton J W and Foxon C T 1998 Group III nitride semiconductors for short wavelength light-emitting devices Rep. Prog. Phys. 61 1
254. Lada M, Cullis A G, Parbrook P J and Hopkinson M 2003 Metastable rocksalt phase in epitaxial GaN on sapphire Appl. Phys. Lett. 83 2808
255. Cheng T S, Jenkins L C, Hooper S E, Foxon C T, Orton J W and Lacklison D E 1995 Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy Appl. Phys. Lett. 66 1509
256. As D J, Potthast S, Schörmann J, Li S F, Lischka K, Nagasawa H and Abe M 2006 Molecular beam epitaxy of cubic group III-nitrides on free-standing 3C-SiC substrates Mater. Sci. Forum 527 1489
257. Novikov S V, Stanton N M, Campion R P, Morris R D, Geen H L, Foxon C T and Kent A J 2008 Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates Semicond. Sci. Technol. 23 015018
258. Moram M A, Barber Z H, Humphreys C J, Joyce T B and Chalker P R 2006 Young's modulus, Poisson's ratio and residual stress and strain in (1 1 1)-oriented scandium nitride thin films on silicon J. Appl. Phys. 100 023514
259. Karch K and Bechstedt F 1997 Ab initio lattice dynamics of BN and AlN: Covalent versus ionic forces Phys. Rev. B 56 7404
260. Kanoun M B, Goumri-Said S, Merad A E, Merad G, Cibert J and Aourag H 2004 Zinc-blende AlN and GaN under pressure: structural, electronic, elastic and piezoelectric properties Semicond. Sci. Technol. 19 1220
261. Li T, Staddon C R, Novikov S V, Fewster P F, Widdowson A, Andrew N L, Kidd P, Harrison I, Winser A, Liao Y and Foxon C T 2002 X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy J. Cryst. Growth 235 103
262. Qu B, Zheng X H, Wang Y T, Feng Z H, Liu S A, Lin S M, Yang H and Liang J W 2001 X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers Thin Solid Films 392 29
263. Schörmann J, As D J, Lischka K, Schley P, Goldhahn R, Li S F, Löffler W, Hetterich M and Kalt H 2006 Molecular beam epitaxy of phase pure cubic InN Appl. Phys. Lett. 89 261903
264. Nishida K, Kitamura Y, Hijikata Y, Yaguchi H and Yoshida S 2004 Epitaxial growth of hexagonal and cubic InN films Phys. Status Solidi b 241 2839
265. Tsuchiya H, Sunaba K, Yonemura S, Suemasu T and Hasegawa F 1997 Cubic dominant GaN growth on (0 0 1) GaAs substrates by hydride vapor phase epitaxy Japan. J. Appl. Phys. 36 L1
266. Qu B, Zheng X H, Wang Y T, Lin S M, Yang H and Liang J W 2001 Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(0 0 1) epilayers measured by conventional x-ray pole figure and grazing incident diffraction pole figure J. Cryst. Growth 226 57
267. Shen X M, Fu Y, Feng G, Zhang B S, Feng Z H, Wang Y T and Yang H 2002 Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(0 0 1) substrates J. Cryst. Growth 246 69
268. Simbrunner C, Navarro-Quezada A, Schmidegg K, Bonanni A, Kharchenko A, Bethke J, Lischka K and Sitter H 2007 In situ x-ray diffraction during MOCVD of III-nitrides Phys. Status Solidi a 204 2798
269. Kharchenko A, Lischka K, Schmidegg K, Sitter H, Bethke J and Woitok J 2005 In situ and real-time characterization of metal-organic chemical vapor deposition growth by high resolution x-ray diffraction Rev. Sci. Instrum. 76 033101