Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 5, 2008, Pages 1064-1066

  Moram, M A ^a   Kappers, M J ^a   Zhang, Y ^a   Barber, Z H ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYERS; DISLOCATION DENSITIES; EDGE DISLOCATIONS; GAN EPILAYERS; GAN FILMS; INTER-LAYERS; LOW DISLOCATION DENSITIES; METAL NITRIDES; MIXED DISLOCATIONS; NETWORK STRUCTURES; REDUCTION METHODS; SAPPHIRE TEMPLATES; THREADING DISLOCATION DENSITIES;

CHROMIUM; CORUNDUM; EPILAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HAFNIUM; NETWORK PROTOCOLS; NIOBIUM; NITRIDES; REFRACTORY METAL COMPOUNDS; SCANDIUM; SENSOR NETWORKS; SILICON NITRIDE; TIME DIVISION MULTIPLEXING; TRANSITION METALS; ZIRCONIUM;

SEMICONDUCTING GALLIUM;

EID: 43949102211     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778608     Document Type: Article

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