A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1819-1823

  Zhu, D ^a   Kappers, M J ^a   Costa, P M F J ^a   McAleese, C ^a   Rayment, F D G ^a   Chabrol, G R ^b   Graham, D M ^b   Dawson, P ^b   Thrush, E J ^c   Mullins, J T ^c   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c Thomas Swan Scientific Equipment Limited   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIERS; HIGH RESOLUTION X RAY DIFFRACTION (HRXRD); MATERIAL QUALITY; MULTIPLE QUANTUM WELL (MQW);

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33745017208     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565250     Document Type: Article

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