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Volumn 68, Issue 5, 1996, Pages 643-645
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Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CALCULATIONS;
CRYSTAL SYMMETRY;
DISLOCATIONS (CRYSTALS);
GRAIN SIZE AND SHAPE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SAPPHIRE;
SEMICONDUCTING FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
BURGERS VECTORS;
DARWIN WIDTHS;
DISLOCATION DENSITY;
GALLIUM NITRIDE;
HORIZONTAL FLOW REACTOR;
THREADING DISLOCATION;
X RAY ROCKING CURVES;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0029755411
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.116495 Document Type: Article |
Times cited : (757)
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References (18)
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