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Volumn 68, Issue 5, 1996, Pages 643-645

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 0029755411     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116495     Document Type: Article
Times cited : (757)

References (18)
  • 9
    • 21544448638 scopus 로고    scopus 로고
    • V. Swaminathan and A. T. Macrander, Materials Aspects of GaAs and InP Based Structures (Prentice Hall, Englewood Cliffs, 1991)
    • V. Swaminathan and A. T. Macrander, Materials Aspects of GaAs and InP Based Structures (Prentice Hall, Englewood Cliffs, 1991).
  • 13
    • 21544438518 scopus 로고    scopus 로고
    • B. D. Cullity, Elements of X-Ray Diffraction (Addison-Wesley, Reading, MA, 1978), pp. 44-45
    • B. D. Cullity, Elements of X-Ray Diffraction (Addison-Wesley, Reading, MA, 1978), pp. 44-45.
  • 17
    • 21544462057 scopus 로고    scopus 로고
    • M. H. Loretto and R. E. Smallman, Defect Analysis in Electron Microscopy (Chapman and Hall, London, 1975)
    • M. H. Loretto and R. E. Smallman, Defect Analysis in Electron Microscopy (Chapman and Hall, London, 1975).
  • 18
    • 21544477295 scopus 로고    scopus 로고
    • B. E. Warren, X-Ray Diffraction (Dover, New York, 1990)
    • B. E. Warren, X-Ray Diffraction (Dover, New York, 1990).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.