Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

Physical Review Letters

Volumn 88, Issue 20, 2002, Pages 2061021-2061024

  Roucka, R ^a   Tolle, J ^a   Chizmeshya, A V G ^a   Crozier, P A ^a   Poweleit, C D ^a   Smith, D J ^a   Tsong, I S T ^a   Kouvetakis, J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ENERGY GAP; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PROBABILITY DENSITY FUNCTION; SOLID SOLUTIONS; SYNTHESIS (CHEMICAL); THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

HEXAGONAL STRUCTURE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037141546     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)