The influence of lattice parameter variation on microstructure of GaN single crystals

Journal of Alloys and Compounds

Volumn 401, Issue 1-2, 2005, Pages 261-264

  Krysko, M ^a   Sarzynski, M ^a   Domagala J ^b   Grzegory, I ^a   Lucznik B ^a   Kamler, G ^a   Porowski, S ^a   Leszczynski M ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

GaN; HVPE; XRD

Indexed keywords

BENDING (DEFORMATION); DISLOCATIONS (CRYSTALS); ELECTRONS; LATTICE CONSTANTS; MICROSTRUCTURE; OXYGEN; PLASTIC DEFORMATION; PRESSURE EFFECTS; SINGLE CRYSTALS; STRAIN; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

DISLOCATION DENSITY; GAN CRYSTSALS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); LATTICE EXPANSION;

GALLIUM NITRIDE;

EID: 24644517964     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.10.077     Document Type: Article

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