Epitaxial growth of hexagonal and cubic InN films

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2839-2842

  Nishida, K ^a   Kitamura, Y ^a   Hijikata, Y ^a,b   Yaguchi, H ^a,b   Yoshida, S ^a,b  

^a SAITAMA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; LASER BEAM EFFECTS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BANDGAP ENERGIES; DIFFRACTION PATTERNS; UNDERLAYERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 7444245442     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405049     Document Type: Conference Paper

References (8)

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