Influence of doping on the lattice dynamics of gallium nitride

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Kaschner, A ^a   Siegle, H ^a,b   Hoffmann, A ^a   Thomsen, C ^a   Birkle, U ^c   Einfeldt, S ^c   Hommel, D ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS;

BUFFER LAYERS; GROWTH MASK; PENDEO-EPITAXY; THIN FILM STRUCTURES;

HETEROJUNCTIONS;

EID: 3442890367     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002672     Document Type: Conference Paper

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