Defect reduction in (11 2-0) a -plane GaN by two-stage epitaxial lateral overgrowth

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Ni, X ^a,b   Ozgur U ^d   Fu, Y ^d   Biyikli, N ^d   Xie, J ^d   Baski, A A ^d   Morkoc H ^d   Liliental Weber, Z ^c  

^a Virginia Commonwealth University   (United States)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COALESCENCE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; PHOTOLUMINESCENCE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL LATERAL OVERGROWTH (ELO); METAL ORGANIC CHEMICAL VAPOR DEPOSITION; THREADING DISLOCATION DENSITY;

GALLIUM NITRIDE;

EID: 33846083208     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2423328     Document Type: Article

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