Rietveld-refinement study of aluminium and gallium nitrides

Journal of Alloys and Compounds

Volumn 382, Issue 1-2, 2004, Pages 100-106

  Paszkowicz, W ^a   Podsiadlo S ^b   Minikayev, R ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Aluminium nitride; Crystal structure and symmetry; Gallium nitride; Lattice parameter; Powder diffraction; Rietveld method; Semiconductors; Structure refinement; X ray diffraction

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL STRUCTURE; CRYSTAL SYMMETRY; DATA REDUCTION; DIFFRACTOMETERS; LATTICE CONSTANTS; X RAY DIFFRACTION;

POWDER DIFFRACTION; RIETVELD METHOD; STRUCTURAL REFINEMENT;

GALLIUM NITRIDE;

EID: 8344251932     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.05.036     Document Type: Conference Paper

References (51)

1. Ambacher O. J. Phys. D. 31:1998;2653-2710.
2. Monemar B. J. Mater. Sci. Mater. Electron. 10:1999;227-254.
3. Pelletier J. Vacuum. 36:1986;977-980.
4. Schulz H., Thiemann K.H. Solid State Commun. 23:1977;815-819.
5. Ballarotto V.W., Kordesch M.E. J. Vac. Sci. Technol. A. 16:1998;1676-1679.
6. Fan Z.Y., Rong G., Browning J., Newman N. Mater. Sci. Eng. B. 67:1999;80-87.
7. Tanaka M., Nakahata S., Sogabe K., Nakata H., Tobioka M. Jpn. J. Appl. Phys. Lett. 36:1997;L1062-L1064.
8. Jeffrey G.A., Parry G.S., Mozzi R.L. J. Chem. Phys. 26:1956;1024-1031.
9. Sirota N.N., Olekhnovich A.I., Olekhnovich N.M. Acta Crystallogr. A24:1968;639-642.
10. Slack G.A. J. Phys. Chem. Solids. 34:1973;321-335.
11. Yim W.M., Paff R.J. J. Appl. Phys. 45:1974;1456-1457.
12. H.F. McMurdie, M.C. Morris, E.H. Evans, B. Paretzkin, J.H. de Groot, C.R. Hubbard, S.J. Carmel, Aluminium nitride, Standard X-ray Diffraction Patterns, NBS Monograph 25, Sec. 12, Institute for Materials Research, National Bureau of Standards, Washington, DC, 1975, p. 5.
13. Slack G.A., Bartram S.F. J. Appl. Phys. 46:1975;89-98.
14. Bezhenar N.P., Bozhko S.A., Belyavina N.N., Markiv V.Ya. Diamond Relat. Mater. 6(8):1997;927-930.
15. Ivanov S.N., Popov P.A., Egorov G.V., Sidorov A.A., Korneev B.I., Zhukova L.M., Ryabov B.P. Phys. Solid State. 39:1997;81-83. (translated from Fiz. Tverd. Tela 39 (1997) 93).
16. Ivanov S.N., Popov P.A., Egorov G.V., Sidorov A.A., Korneev B.I., Zhukova L.M., Ryabov B.P. Phys. Solid State. 39:1997;81-83. (translated from Fiz. Tverd. Tela 39 (1997) 93).
17. Yamane H., Shimada M., DiSalvo F.J. J. Mater. Sci. Lett. 17:1998;399-401.
18. Lan Y.C., Chen X.L., Cao Y.G., Xu Y.P., Xun L.D., Xu T., Liang J.K. J. Cryst. Growth. 207:1999;247-250.
19. Iwanaga H., Kunishige A., Takeuchi S. J. Mater. Sci. 35:2000;2451-2454.
20. Paszkowicz W., Knapp M., Podsiadło S., Kamler G., Pełka J.B. Acta Phys. Polon. 101:2002;781.
21. Singh N.B., Berghmans A., Zhang H., Wait T., Clarke R.C., Zingaro J., Golombeck J.C. J. Cryst. Growth. 250:2003;107-112.
22. Leszczynski M., Suski T., Perlin P., Teisseyre H., Grzegory I., Bockowski M., Jun J., Porowski S., Major J. J. Phys. D. 28:1995;A149-A153.
23. Leszczynski M., Teisseyre H., Suski T., Grzegory I., Bockowski M., Jun J., Porowski S., Pakula K., Baranowski J.M., Foxon C.T., Cheng T.S. Appl. Phys. Lett. 69:1996;73-75.
24. Leszczynski M., Grzegory I., Teisseyre H., Suski T., Bockowski M., Jun J., Baranowski J.M., Porowski S., Domagala J. J. Cryst. Growth. 169:1996;235-242.
25. Yamane H., Shimada M., Endo T., DiSalvo F.J. Jpn. J. Appl. Phys. 37:1998;3436-3440.
26. S. Krukowski, M. Leszczynski, S. Porowski, Thermal properties of the group III nitrides, in: J.H. Edgar, S. Strite, I. Akasaki, H. Amano, C. Wetzel (Eds.), Properties, Processing and Applications of GaN and Related Semiconductors, INSPEC, Institution of Electrical Engineers, London, UK, 1999, pp. 21-28.
27. Balkas C.M., Davis R.F. J. Am. Ceram. Soc. 79:1996;2309-2312.
28. Ikeda T., Takata M., Sakata M., Waliszewski J., Dobrzyñski L., Porowski S., Jun J. J. Phys. Soc. Jpn. 67:1998;4104-4109.
29. Chen X.L., Liang J.K., Xu Y.P., Xu T., Jiang P.Z., Yu Y.D., Lu K.Q. Mod. Phys. Lett. B. 13:1999;285-290.
30. W. Paszkowicz, J.Z. Domagała, J.A. Sokolłowski, G. Kamler, S. Podsiadlło, M. Knapp, Thermal expansion of GaN in the temperature range 11 K-296 K, in: M. Lefeld-Sosnowska, J. Gronkowski (Eds.), Synchrotron Radiation Studies of Materials, Proceedings of the 5th National Symposium of Synchrotron Users, Warsaw, 31.05.-1.06.1999, Inst. Exp. Phys. of Warsaw University, Warsaw, 1999, pp. 183-189.
31. Reeber R.R., Wang K. J. Mater. Res. 15:2000;40.
32. Yamane H., Shimada M., DiSalvo F.J. Mater. Lett. 42:2000;66-70.
33. Wright A.F., Nelson J.S. Phys. Rev. B. 51:1995;7866-7869.
34. Kim K., Lambrecht W.R.L., Segall B. Phys. Rev. B. 53:1996;16310-16326.
35. Paulus B., Shi F.J., Stoll H. J Phys.: Condens. Mater. 9:1997;2745-2758.
36. Stampfl C., Van de Walle C.G. Phys. Rev. B. 59:1998;5521-5535.
37. Zoroddu A., Bernardini F., Ruggerone P., Fiorentini V. Phys. Rev. B. 64:2001;045208.
38. Chen X.-L., Lan Y.-C., Liang J.-K., Cheng X.-R., Xu Y.-P., Xu T., Jiang P.Z., Lu K.Q. Chin. Phys. Lett. B. 16:1999;107.
39. Podsiadło S. Thermochim. Acta. 256:1995;367-373.
40. Podsiadło S. Thermochim. Acta. 256:1995;375-380.
41. W. Paszkowicz, Bragg-Brentano diffractometer equipped with a focusing monochromator and a strip detector, in: H. Morawiec, D. Stróż (Eds.), Proc. XIX Conf. on Applied Crystallography (Krakón 1-4 Sept. 2003), World Scientific, Singapore, 2004, pp. 22-26.
42. Young R.A., Sakthivel A., Moss T.S., Paiva-Santos C.-O. J. Appl. Crystallogr. 28:1995;366-367.
43. H. Marciniak, DMPLOT 3.48, 2000, http://www.unipress.waw.pl/.
44. Riello P., Canton P., Fagherazzi G. Powder Diffrac. 10:1995;204-206.
45. Huang T., Parrish W., Masciocchi N., Wang P. Adv. X-ray Anal. 49:1993;973.
46. Riello P., Canton P., Fagherazzi G. Powder Diffrac. 12:1997;160-166.
47. Widmann F., Feuillet G., Daudin B., Rouvière J.L. J. Appl. Phys. 85:1999;1550-1555.
48. Sudhir G.S., Fujii H., Wong W.S., Kisielowski C., Newman N., Dieker C., Liliental-Weber Z., Rubin M.D., Weber E.R. J. Electron. Mater. 27:1998;215-221.
49. E. Grzanka, B. Palosz, S. Gierlotka, Private communication, 2004.
50. Sakata M., Cooper M.J. J. Appl. Cryst. 12:1979;554-563.
51. McCusker L.B., Von Dreele R.B., Cox D.E., Louër D., Scardi P. J. Appl. Cryst. 32:1999;36-50.