Cubic dominant GaN growth on (001) GaAs substrates by hydride vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 1 A-B, 1997, Pages

  Tsuchiya, Harutoshi ^a   Sunaba, Kenji ^a   Yonemura, Syogo ^a   Suemasu, Takashi ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; HYDRIDES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE CLEANING; THERMAL EFFECTS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTOR GROWTH;

EID: 0030644571     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1     Document Type: Article

References (9)