Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 245, Issue 1-2, 2002, Pages 15-20

  Ide, T ^a   Shimizu, M ^b,c   Shen, X Q ^b,c   Jeganathan, K ^b,c   Okumura, H ^b,c   Nemoto, T ^a  

^a MEIJI UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Ultra Low Loss Pwr Device TRB   (Japan)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRON GAS; HETEROJUNCTIONS; LIGHT EMITTING DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

FILM QUALITY;

MOLECULAR BEAM EPITAXY;

EID: 0036836739     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01665-2     Document Type: Article

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