X-ray characterization of high quality AlN epitaxial layers: Effect of growth condition on layer structural properties

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2014-2018

  Paduano, Q S ^a   Drehman, A J ^a   Weyburne, D W ^a   Kozlowski, J ^b   Serafinczuk, J ^b   Jasinski, J ^c   Liliental Weber, Z ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN EPITAXIAL LAYERS; DISLOCATION DENSITIES; GROWTH CONDITIONS; INCLINATION ANGLES; SUBSTRATE NITRIDATION; THREADING DISLOCATION DENSITIES; X-RAY CHARACTERIZATION; X-RAY DIFFRACTION STUDIES;

NITRIDES; SAPPHIRE; STRUCTURAL PROPERTIES; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 84875118669     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303251     Document Type: Conference Paper

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