Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(0 0 1) substrates

Journal of Crystal Growth

Volumn 246, Issue 1-2, 2002, Pages 69-72

  Shen, X M ^a   Fu, Y ^a   Feng, G ^a   Zhang, B S ^a   Feng, Z H ^a   Wang, Y T ^a   Yang, H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Transmission electron microscopy; A1. X ray diffraction; A3. Epitaxial lateral overgrowth; A3. Metalorganic vapor phase epitaxy; B1. Cubic gallium nitride

Indexed keywords

CRYSTALLINE MATERIALS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM ARSENIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LATERAL OVERGROWTH;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036888437     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01827-4     Document Type: Article

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