Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 163-167

  Pereira, S ^a,b   Correia, M R ^a   Pereira, E ^a   O'Donnell, K P ^b   Martin, R W ^b   White, M E ^b   Alves, E ^c   Sequeira, A D ^c   Franco, N ^c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Composition; InGaN; Photoluminescence; Rutherford backscattering; Strain; X ray diffraction

Indexed keywords

DECOMPOSITION; GALLIUM NITRIDE; INTERFACES (MATERIALS); LATTICE CONSTANTS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037198498     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00039-9     Document Type: Conference Paper

References (21)

1. Group III nitride semiconductor compounds, physics and applications