Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(0 0 1) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure

Journal of Crystal Growth

Volumn 226, Issue 1, 2001, Pages 57-61

  Qu, B ^a   Zheng, X H ^a   Wang, Y T ^a   Lin, S M ^a   Yang, Hui ^a   Liang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Characterization; A1. Defects; A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTALLINE MATERIALS; GRAIN GROWTH; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

EPILAYERS; X-RAY POLES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035369014     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01366-5     Document Type: Article

References (10)