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Physical Review Letters

Volumn 95, Issue 8, 2005, Pages

Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides

(6) Huang, X R a Bai, J a Dudley, M a Wagner, B b Davis, R F b Zhu, Y c

a Stony Brook University (United States)

b North Carolina State University (United States)

c BROOKHAVEN NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

STACKING SEQUENCES; STRAIN RELAXATION; VICINAL SURFACE EPITAXY (VSE);

ALUMINUM NITRIDE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LATTICE CONSTANTS; SILICON CARBIDE;

STRAIN;

EID: 27144450894 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.95.086101 Document Type: Article

Times cited : (59)

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