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Volumn 79, Issue 9, 1996, Pages 2309-2312

Synthesis routes and characterization of high-purity, single-phase gallium nitride powders

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHARACTERIZATION; CHEMICAL REACTIONS; CRYSTALS; FREE ENERGY; GALLIUM; OXIDATION; POWDERS; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

EID: 0030241767     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1996.tb08977.x     Document Type: Article
Times cited : (163)

References (16)
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    • R. J. Molnar, R. Singh, and T. D. Moustakas, "Blue-Light-Emitting Gallium Nitride p-n Junctions Grown by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy," Appl. Phys. Lett., 66 [3] 268-73 (1995).
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.3 , pp. 268-273
    • Molnar, R.J.1    Singh, R.2    Moustakas, T.D.3
  • 2
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    • InGaN/AlGaN Blue Light Emitting Diodes
    • S. Nakamura, "InGaN/AlGaN Blue Light Emitting Diodes," J. Vac. Sci. Technol., A, 13 [3] 705-10 (1995).
    • (1995) J. Vac. Sci. Technol., A , vol.13 , Issue.3 , pp. 705-710
    • Nakamura, S.1
  • 4
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    • InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
    • Nakamura et al., "InGaN-Based Multi-Quantum-Well-Structure Laser Diodes," Jpn. J. Appl. Phys., Part 2, 35 [1B] 74-76 (1996).
    • (1996) Jpn. J. Appl. Phys., Part 2 , vol.35 , Issue.1 B , pp. 74-76
    • Nakamura1
  • 5
    • 33751127103 scopus 로고
    • GaN Thin Films Grown via Organometallic Vapor Phase Epitaxy on α(6H)-SiC(001) Using High-Temperature Monocrystalline AlN Buffer Layers
    • T. W. Weeks Jr., M. D. Bremser, K. S. Ailey, E. Carlson, W. G. Perry, and R. F. Davis, "GaN Thin Films Grown via Organometallic Vapor Phase Epitaxy on α(6H)-SiC(001) Using High-Temperature Monocrystalline AlN Buffer Layers," Appl. Phys. Lett., 67 [3] 401-403 (1995).
    • (1995) Appl. Phys. Lett. , vol.67 , Issue.3 , pp. 401-403
    • Weeks Jr., T.W.1    Bremser, M.D.2    Ailey, K.S.3    Carlson, E.4    Perry, W.G.5    Davis, R.F.6
  • 6
    • 84926928108 scopus 로고
    • 3N, GaN, InN Metallamide und Metallnitride
    • 3N, GaN, InN Metallamide und Metallnitride," Z. Anorg. Chem., 239, 282-87 (1938).
    • (1938) Z. Anorg. Chem. , vol.239 , pp. 282-287
    • Juza, H.1
  • 8
    • 0042504215 scopus 로고
    • Preparation of Gallium Nitride
    • I. G. Pichugin and D. A. Yaskov, "Preparation of Gallium Nitride," Inorg. Mater., 6, 1732-34 (1972).
    • (1972) Inorg. Mater. , vol.6 , pp. 1732-1734
    • Pichugin, I.G.1    Yaskov, D.A.2
  • 9
    • 0002223599 scopus 로고
    • Preparation, Stability, and Luminescence of Gallium Nitride
    • M. R. Lorenz and B. B. Binkowski, "Preparation, Stability, and Luminescence of Gallium Nitride," J. Electrochem. Soc., 109, 24-26 (1962).
    • (1962) J. Electrochem. Soc. , vol.109 , pp. 24-26
    • Lorenz, M.R.1    Binkowski, B.B.2
  • 10
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    • On the Properties of the Nitrides of Aluminum and Gallium
    • A. Addamiano, "On the Properties of the Nitrides of Aluminum and Gallium," J. Electrochem. Soc., 108, 1072 (1972).
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    • Addamiano, A.1
  • 11
    • 0014857668 scopus 로고
    • Preparation of Single Phase Gallium Nitride from Single Crystal Gallium Arsenide
    • B. J. Isherwood and D. K. Wickenden, "Preparation of Single Phase Gallium Nitride from Single Crystal Gallium Arsenide," J. Mater. Sci., 5, 869-72 (1970).
    • (1970) J. Mater. Sci. , vol.5 , pp. 869-872
    • Isherwood, B.J.1    Wickenden, D.K.2
  • 16
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    • Synthesis and Characterization of High Purity, Single Phase GaN Powder
    • C. M. Balkaş, C. Basçeri, and R. F. Davis, "Synthesis and Characterization of High Purity, Single Phase GaN Powder," Powder Diffr., 10 [4] 266-68 (1995).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.