Growth and characterization of free-standing zinc-blende (cubic) GaN layers and substrates

Semiconductor Science and Technology

Volumn 23, Issue 1, 2008, Pages

  Novikov, S V ^a   Stanton, N M ^a   Campion, R P ^a   Morris, R D ^a   Geen, H L ^a   Foxon, C T ^a   Kent, A J ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PIEZOELECTRIC DEVICES; POLARIZATION;

HIGH FREQUENCY ELECTRONIC APPLICATIONS; LATTICE MATCHED SUBSTRATES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; ULTRAVIOLET OPTOELECTRONIC DEVICES;

GALLIUM NITRIDE;

EID: 37249087239     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/1/015018     Document Type: Article

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