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Volumn 77, Issue 4, 1998, Pages 1013-1025

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

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Indexed keywords


EID: 0032056159     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619808221225     Document Type: Article
Times cited : (593)

References (24)
  • 8
    • 0001881104 scopus 로고
    • 1996, Internaitonal School of Crystallography: 23rd Course, X-Ray and Neutfon Dynamical Diffraction: Theory and Applications, April 9-12, Erice, Italy, p. 287
    • Fewster, P. F., 1989, J. appi. Crystallogr., 22, 64; 1996, Internaitonal School of Crystallography: 23rd Course, X-Ray and Neutfon Dynamical Diffraction: Theory and Applications, April 9-12, Erice, Italy, p. 287.
    • (1989) J. Appi. Crystallogr. , vol.22 , pp. 64
    • Fewster, P.F.1
  • 19
    • 21844468471 scopus 로고
    • 1995, J. Phys. D, 29, 1677
    • Schuster, M., and Göbel, H., 1995, J. Phys. D, 28, A270; 1995, J. Phys. D, 29, 1677.
    • (1995) J. Phys. D , vol.28 , pp. A270
    • Schuster, M.1    Göbel, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.