X-ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001) GaAs substrate

Thin Solid Films

Volumn 392, Issue 1, 2001, Pages 29-33

  Qu, B ^a   Zheng, X H ^a   Wang, Y T ^a   Feng, Z H ^a   Liu, S A ^a   Lin, S M ^a   Yang, Hui ^a   Liang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Gallium nitride; X Ray diffraction

Indexed keywords

ADDITION REACTIONS; COMPUTATIONAL METHODS; DIFFRACTOMETERS; FILM PREPARATION; IRRADIATION; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; TWINNING; X RAY DIFFRACTION ANALYSIS;

DIFFRACTION GEOMETRY FACTORS;

SEMICONDUCTING FILMS;

EID: 0035939503     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01007-0     Document Type: Article

References (15)