Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Paskova, T ^a   Hommel, D ^a   Paskov, P P ^b   Darakchieva, V ^b   Monemar, B ^b   Bockowski, M ^c   Suski, T ^c   Grzegory, I ^c   Tuomisto, F ^d   Saarinen, K ^d   Ashkenov, N ^e   Schubert, M ^e  

^a UNIVERSITY OF BREMEN   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^d AALTO UNIVERSITY   (Finland)

^e UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; GALLIUM NITRIDE; HEAT TREATMENT; LATTICE CONSTANTS; STRAIN; VAPOR PHASE EPITAXY;

ANNEALING TEMPERATURE; HIGH TEMPERATURE TREATMENT; IN-PLANE LATTICE PARAMETERS; STRAIN DISTRIBUTION;

THIN FILMS;

EID: 33646713007     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2192149     Document Type: Article

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