Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 5097-5102

  Davydov, V Yu ^a   Averkiev, N S ^a   Goncharuk, I N ^a   Nelson, D K ^a   Nikitina, I P ^a   Polkovnikov, A S ^a   Smirnov, A N ^a   Jacobson, M A ^a   Semchinova, O K ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAINS; BIAXIAL STRESS; COMPARATIVE ANALYSIS; DEFORMATION POTENTIAL; EXCITONIC PHOTOLUMINESCENCE; GAN EPITAXIAL LAYERS; HEXAGONAL GAN; HIGH QUALITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PHONON MODES; OPTICAL PHONONS; RAMAN DATA; SIC SUBSTRATES;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 0001205353     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366310     Document Type: Article

References (24)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).
3. For instance, R. J. Briggs and A. K. Ramdas, Phys. Rev. B 13, 5518 (1976);
4. O. Brafman, J. Vac. Sci. Technol. B 10, 1730 (1992);
5. G. Attolini, L. Francesio, P. Franzosi, C. Pelosi, S. Gennari, and P. P. Lottici, J. Appl. Phys. 75, 4156 (1994).
6. W. J. Meng and T. A. Perry, J. Appl. Phys. 76, 7824 (1994).
7. T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, J. Appl. Phys. 77, 4389 (1995).
8. W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 68, 970 (1996).
9. S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, and S. Nakamura, Appl. Phys. Lett. 68, 3766 (1996).
10. I. A. Buyanova, J. P. Bergman, B. Monemar, H. Amano, and I. Akasaki, Appl. Phys. Lett. 69, 1255 (1996).
11. W. Shan, R. J. Hauenstein, A. J. Fischer, J. J. Song, W. G. Perry, M. D. Bremser, R. F. Davis, and B. Goldenber, Phys. Rev. B 54, 13 460 (1996).
12. C. Kiselowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, Phys. Rev. B 54, 17 745 (1996).
13. V. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, A. S. Polkovnikov, M. A. Jakobson, I. P. Nikitina, and O. K. Semchinova, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Vol. 1, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 517.
14. V. A. Dmitriev, K. G. Irvine, J. A. Edmond, G. E. Bulman, C. H. Carter Jr., A. S. Zubrilov, I. P. Nikitina, V. N. Nikolaev, A. I. Babanin, Yu. V. Melnik, E. V. Kalinina, and V. E. Sizov, Institute of Physics Conference Series #141, edited by H. Goronkin and U. Mishra (IOP Publishing, Bristol, 1995), Chap. 5, p. 497.
15. M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, and S. Porowski, J. Appl. Phys. 76, 15 (1994).
16. D. D. Manchon, A. S. Barker, P. J. Dean, and R. B. Zetterstrom, Solid State Commun. 8, 1227 (1970).
17. A. Cingolani, M. Ferrara, M. Lugara, and G. Scamarcio, Solid State Commun. 11, 823 (1986).
18. P. Perlin, C. J. Carrilon, J. P. Itie, A. S. Miguel, I. Grzegory, and A. Polian, Phys. Rev. B 45, 83 (1992).
19. T. Kozawa, T. Kachi, H. Kano, Y. Taga, M. Hachimoto, N. Koide, and K. Manabe, J. Appl. Phys. 75, 1098 (1993).
20. T. Azuhata, T. Sota, K. Suzuki, and S. Nakamura, J. Phys.: Condens. Matter 7, L129 (1995).
21. D. Kirillov, H. Lee, and J. S. Harris, Jr., J. Appl. Phys. 80, 4058 (1996).
22. C. A. Arguello, D. L. Rousseau, and S. P. S. Porto, Phys. Rev. 181, 1351 (1969).
23. A. Polian, M. Grimsditch, and I. Grzegory, J. Appl. Phys. 79, 3343 (1996).
24. F. Demangeot, J. Frandon, M. A. Renucci, O. Briot, B. Gil, and R. L. Aulombard, Solid State Commun. 100, 207 (1996).