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Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 391-395

Analysis of the defect structure of epitaxial GaN

(4) Heinke, H a Kirchner, V a Einfeldt, S a Hommel, D a

a UNIVERSITY OF BREMEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDES; MOSAIC BLOCKS;

SEMICONDUCTING FILMS;

EID: 0033221285 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199911)176:1<391::AID-PSSA391>3.0.CO;2-I Document Type: Article

Times cited : (77)

References (9)

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