Structure characterization of (Al,Ga)N epitaxial layers by means of X-ray diffractometry

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 2, 2001, Pages 415-418

  Kozlowski J ^a   Paszkiewicz, R ^a   Tlaczala M ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035539945     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:2<415::AID-PSSB415>3.0.CO;2-U     Document Type: Article

References (3)

1. R. PASZKIEWICZ, R. KORBUTOWICZ, M. PANEK, B. PASZKIEWICZ, M. TŁACZAŁA, and S. V. NOVIKOV, Heterostructure Epitaxy and Devices - Head' 97, Vol. 48, Eds. P. KORDOS and J. NOVAK, Kluver Academic Publ., Dordrecht 1998 (p. 98).
2. M. A. KOJDECKI, Int. J. Appl. Electromagn. Mater. 2, 147 (1991).
3. C. W. GROETSCH, The Theory of Tikhonov Regularization for Fredholm Equations of the First Kind, Pitman Publ. Ltd., London 1984.