Compositional inhomogeneity of a high-efficiency Inx Ga1-x N based multiple quantum well ultraviolet emitter studied by three dimensional atom probe

Applied Physics Letters

Volumn 92, Issue 4, 2008, Pages

  Galtrey, M J ^a   Oliver, R A ^a   Kappers, M J ^a   McAleese, C ^a   Zhu, D ^a   Humphreys, C J ^a   Clifton, P H ^b   Larson, D ^b   Cerezo, A ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Imago Scientific Instruments   (United States)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; INDIUM; WAVELENGTH;

ALY GA1-Y N BARRIER LAYERS; COMPOSITIONAL INHOMOGENEITY; QUANTUM WELL DISCONTINUITIES; THREE DIMENSIONAL ATOM PROBE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 38849151760     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2829592     Document Type: Article

References (11)

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