Depth-resolving structural analysis of GaN layers by skew angle x-ray diffraction

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3537-3539

  Reiher, A ^a   Blasing J ^a   Dadgar, A ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ALGORITHMS; ANGLE MEASUREMENT; COMPUTATIONAL METHODS; DIFFRACTOMETERS; LIGHT EMITTING DIODES; MATRIX ALGEBRA; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; SEMICONDUCTOR QUANTUM WELLS; SILICON; SUBSTRATES; X RAY DIFFRACTION;

FULL WIDTH AT HALF MAXIMUM (FWHM); INCIDENT ANGLES; MULTI-QUANTUM WELLS (MQW); SKEW ANGLE X-RAY DIFFRACTION (SAXRD);

GALLIUM NITRIDE;

EID: 2542498884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1704870     Document Type: Article

References (10)

1. M. Poschenrieder, K. Fehse, F. Schulze, J. Bläsing, H. Witte, A. Krtschil, A. Dadgar, A. Diez, J. Christen, and A. Krost, Phys. Status Solidi C 0, 267 (2002).
2. A. Reiher, J. Bläsing, A. Dadgar, A. Diez, and A. Krost, J. Cryst. Growth 248, 563 (2003).
3. M. H. Lyons and M. A. G. Halliwell, Inst. Phys. Conf. Ser. 76, 10 (1985).
4. A. Krost, G. Bauer, and A. Woitok, in Optical Characterization of Epitaxial Semiconductor Layers, edited by G. Bauer and W. Richter (Springer, New York, 1996), Vol. 287.
5. S. J. Miles, G. S. Green, B. K. Tanner, M. A. Halliwell, and M. H. Lyons, Mater. Res. Soc. Symp. Proc. 138, 539 (1989).
6. V. Ratnikov, R. Kyutt, T. Shubina, T. Paskova, E. Valcheva, and B. Monemar, J. Appl. Phys. 88, 6252 (2000).
7. H. R. Ress, W. Faschinger, and G. Landwehr, J. Phys. D 31, 3272 (1998).
8. C. Genzel, Phys. Status Solidi A 156, 353 (1996).
9. J. Bläsing, A. Reiher, A. Dadgar, A. Diez, and A. Krost, Appl. Phys. Lett. 81, 2722 (2002).
10. Y. J. Sun, O. Brandt, T. Y. Liu, A. Trampert, K. H. Ploog, J. Bläsing, and A. Krost, Appl. Phys. Lett. 81, 4928 (2002).