Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

Journal of Applied Physics

Volumn 97, Issue 8, 2005, Pages

  Wang, T ^a   Raviprakash, G ^a   Ranalli, F ^a   Harrison, C N ^a   Bai, J ^a   David, J P R ^a   Parbrook, P J ^a   Ao, J P ^b   Ohno, Y ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; SAPPHIRE SUBSTRATES; SINGLE QUANTUM WELLS (SQW); STRAIN RELAXATION;

CRYSTALS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

LIGHT EMITTING DIODES;

EID: 21444434112     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1877816     Document Type: Article

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