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Volumn 298, Issue SPEC. ISS, 2007, Pages 504-507

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

(9) Zhu, D a Kappers, M J a McAleese, C a Graham, D M b Chabrol, G R b Hylton, N P b Dawson, P b Thrush, E J c Humphreys, C J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b UNIVERSITY OF MANCHESTER (United Kingdom)

c Thomas Swan Scientific Equipment Ltd (United Kingdom)

Author keywords

A1. Photoluminescence; A3. Organometallic vapor phase epitaxy; B1. Nitride

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

INTERNAL QUANTUM EFFICIENCY; MICROSTRUCTURAL PROPERTIES; PHOTOLUMINESCENCE DECAY; PHOTOLUMINESCENCE INTERNAL QUANTUM EFFICIENCY;

SEMICONDUCTOR LASERS;

EID: 33846435187 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.155 Document Type: Article

Times cited : (10)

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