Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD

Journal of Physics D: Applied Physics

Volumn 36, Issue 10 A, 2003, Pages

  Tagliente, M A ^a   Tapfer, L ^a   Waltereit, P ^b   Brandt, O ^b   Ploog, K H ^b  

^a Centro Ricerche Brindisi   (Italy)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHASE EQUILIBRIA; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; INTERFACE ROUGHNESS; MACROSTRAIN FIELD; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037945613     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/10A/339     Document Type: Article

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