Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on aln/6H-SiC(0001 ) substrates

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 224-231

  Perry, William G ^a   Zheleva, T ^a   Bremser, M D ^a   Davis, R F ^a   Shan, W ^b   Song, J J ^b  

^a North Carolina State University   (United States)

^b OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

Biaxial strain; Donor bound excitons; Gallium nitride (GaN); Organometallic vapor phase epitaxy (OMVPE); Photoluminescence (PL); Poisson's ratio; Transmission electron microscopy (TEM); X ray diffraction

Indexed keywords

EID: 0000813962     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0155-z     Document Type: Article

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