Brillouin scattering study in the GaN epitaxial layer

Physica B: Condensed Matter

Volumn 219-220, Issue 1-4, 1996, Pages 547-549

  Takagi, Y ^a   Ahart, M ^a   Azuhata, T ^b   Sota, T ^b   Suzuki, K ^b   Nakamura, S ^c  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BRILLOUIN SCATTERING; ELASTICITY; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 13544250854     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(95)00807-1     Document Type: Article

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