Time-delayed indium incorporation in ultrathin (InxGa1-xN/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 82, Issue 25, 2003, Pages 4558-4560

  Schulze, F ^a   Blasing J ^a   Dadgar, A ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL RESOLVING POWER; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; ULTRATHIN FILMS; X RAY DIFFRACTION ANALYSIS;

X-RAY REFLECTOMETRY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038383119     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1586472     Document Type: Article

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